研究了Er_2O_3掺杂对ZnO压敏电阻微观结构和电性能的影响.实验发现,在ZnO压敏电阻中加入Er_2O_3不仅可以提高压敏电压V1mA,同时还可改善非线性系数和漏电流特性.但过量的Er_2O_3将会使压敏电阻的耐大电流冲击特性劣化.微观结构和XRD图谱分析表明,Er_2O_3以一种化合物的形式存在于晶界,阻碍了晶界的运动,使材料烧结后具有较小的晶粒尺寸,并且粒径分布比较均匀.当Er_2O_3的添加量为0.8 mol%时,样品的压敏电压V1mA约为360 V/mm,非线性系数α达到86,并且在8/20 μs的耐大电流冲击能力的试验中,样品耐受冲击电流的峰值大于1.6 kA/cm~2.
The effect of Er_2O_3 on the microstructure and electrical properties was studied. It was found that Er_2O_3 doping can substantially increase the breakdown voltage and improve the nonlinear coefficient and leakage current. But excessive Er_2O_3 will decrease the withstanding surge current. The microstructure analysis and XRD patterns indicate that Er_2O_3 additive exists in ZnO grain boundary in the form of a new compound and hinders the movement of grain boundary, which reduces the size of ZnO grain and makes the grains more uniform. The result shows that with doping of 0.8 mol% Er_2O_3, the breakdown voltage is about 360 V/mm, nonlinear coefficient reaches 86 and the withstanding surge current of 8/20μs waveshape is higher than 1.6 kA/cm~2.
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