采用CoCrPtNb四元合金作磁记录介质,并采用多层膜结构(CoCrPt)100-xNbx/CrTi/C/GIass制备玻璃盘基硬盘.实验结果表明:采用适宜厚度的籽晶层与合适组分的底层和磁性层的多层膜结构,即使在室温下溅射,此种薄膜磁记录介质也可得到高达260 kA/m的矫顽力;在550℃高温下,经过30 min真空退火后,其矫顽力有较大幅度提高,并在Nb含量为2.4%(原子分数)时达到极大值386 kA/m,适用于高密度磁记录.同时,也详细分析了磁性层和底层组分、籽晶层厚度以及真空退火对磁记录介质磁性能和微结构的影响.
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