外延硅经过碳注入、氢气氛下高温退火和电化学腐蚀相继处理之后,发出位于431 nm左右的蓝色荧光峰.随电化学腐蚀条件的增强,蓝色荧光峰先变强后消失,并出现位于716 nm处的红光峰.样品中随碳注入而注入的杂质C=O复合体镶嵌在退火过程所形成的纳米硅颗粒的表面,形成典型的纳米硅镶嵌结构.正是这种结构导致了蓝光发射.
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