采用基于密度泛函理论的第一性原理的方法,对厚度为0.54～3.30nm纳米Si薄膜的电子结构、光学性质及弹性常数进行了计算.结果表明,纳米Si薄膜是直接带隙半导体材料;随着纳米Si薄膜厚度的减小,带隙逐渐增大;薄膜的光学吸收边发生蓝移,吸收带出现宽化现象;弹性常数、杨氏模量和泊松比呈现尺寸效应.
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