氢、氧等离子体处理对氮化硼薄膜场发射特性的影响

功能材料, 2004, 35(z1): 2246-2248.

氢、氧等离子体处理对氮化硼薄膜场发射特性的影响

顾广瑞 ^1, , 金逢锡 ^2, , 李全军 ^3, , 盖同祥 ^4, , 李英爱 ^5, , 赵永年 ^6,

1.延边大学,理工学院物理系,吉林,延吉,133002

2.延边大学,理工学院物理系,吉林,延吉,133002

3.延边大学,理工学院物理系,吉林,延吉,133002

4.延边大学,理工学院物理系,吉林,延吉,133002

5.吉林大学超硬材料国家重点实验室,吉林,长春,130012

6.吉林大学超硬材料国家重点实验室,吉林,长春,130012

关键词：氮化硼薄膜 , 场发射 , 氢等离子体 , 氧等离子体

Influence of H2 and O2 plasma treatment on field emission characteristics for BN films

利用射频磁控溅射方法,在n型(100)Si基底上沉积了氮化硼(BN)薄膜,红外光谱测试表明,所有样品为六角氮化硼(h-BN)结构.经过氢、氧等离子体处理之后,在超高真空系统中测量了BN薄膜的场发射特性.实验结果表明,经过氢等离子体处理后BN薄膜的场发射开启电场明显降低,发射电流明显升高;而氧等离子体处理前后对h-BN薄膜的场发射特性影响不大,只是发射电流略有降低.不同样品的Fowler-Nordheim(F-N)曲线均为直线,表明电子发射是通过隧穿BN表面势垒发射到真空.

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氢、氧等离子体处理对氮化硼薄膜场发射特性的影响

Influence of H2 and O2 plasma treatment on field emission characteristics for BN films

参考文献