以硝酸铈为原料,十二烷基苯磺酸钠为分散剂,过氧化氢为氧化剂,氨水为沉淀剂,采用直接沉淀法制备了粒径分布均匀的纳米氧化铈粉体,并通过XRD,TEM等手段对粉体进行了表征.采用所制备的氧化铈粉体配置成抛光浆料对硅片进行抛光,研究了浆料pH值、固含量及过氧化氢浓度对n型半导体硅晶片(111)晶面抛光性能的影响.确定了最佳的抛光条件为:pH值10.5,含固量为0.5%,过氧化氢体积分数为1.5%.此时的抛光速率为61.1 nm·min-1,所抛光的硅晶片的表面粗糙度为0.148nm.
参考文献
| [1] | 徐进,雒建斌,路新春,张朝辉,潘国顺.超精密表面抛光材料去除机理研究进展[J].科学通报,2004(17):1700-1705. |
| [2] | 宋晓岚,李宇煙,江楠,屈一新,邱冠周.化学机械抛光技术研究进展[J].化工进展,2008(01):26-31. |
| [3] | 连军 .超大规模集成电路二氧化硅介质层的化学机械抛光技术的研究[D].河北工业大学,2002. |
| [4] | Liangyong Wang;Kailiang Zhang;Zhitang Song;Songlin Feng .Ceria concentration effect on chemical mechanical polishing of optical glass[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2007(11):4951-4954. |
| [5] | R. Manivannan;S. Ramanathan .Role Of Abrasives In High Selectivity Sti Cmp Slurries[J].Microelectronic engineering,2008(8):1748-1753. |
| [6] | Kang H G;Park H S;Paik U;Park J G .Effects of abrasive particle size and molecular weight of poly(acrylic add)in ceria slurry on removal selectivity of SiO2/Si3N4 films in shallow trench isolation chemical mechanical planarization[J].Journal of Materials Research,2007,22(03):777. |
| [7] | Carter PW;Johns T P .Interfacial reactivity between coria and silicon dioxide and silicon nitride surfaces-fate-s-Orgsnic additive effects[J].Electrochemical and Solid-State Letters,2005,8(08):G218. |
| [8] | XU Jin,LUO Jianbin,Lu Xinchun,Zhang Chaohui,PAN Guoshun.Progress in material removal mechanisms of surface polishing with ultra precision[J].科学通报(英文版),2004(16):1687-1693. |
| [9] | H.-I. CHEN;H.-Y. CHANG .Synthesis of nanocrystalline cerium oxide particles by the precipitation method[J].Ceramics International,2005(6):795-802. |
| [10] | SONG Xiao-lan,XU Da-yu,ZHANG Xiao-wei,SHI Xun-da,JIANG Nan,QIU Guan-zhou.Electrochemical behavior and polishing properties of silicon wafer in alkaline slurry with abrasive CeO2[J].中国有色金属学会会刊（英文版）,2008(01):178-182. |
| [11] | 陈杨,陈志刚,陈爱莲.纳米CeO2磨料在硅晶片化学机械抛光中的化学作用机制[J].润滑与密封,2006(03):67-69,72. |
| [12] | 陈杨,陈建清,陈志刚,陈爱莲.纳米CeO2磨料对硅晶片CMP的效果与机理研究[J].电子元件与材料,2004(05):46-48. |
| [13] | 谭刚.纳米CeO2抛光料对硅晶片进行化学机械抛光的研究[J].中国机械工程,2005(z1):341-343. |
| [14] | Li YQ;Fang WQ;Liu WH;Liu HC;Mo CL;Wang L;Jiang FY .Study of polarization field in GaN-based blue LEDs on Si and sapphire substrate by electroluminescence[J].Journal of Luminescence: An Interdisciplinary Journal of Research on Excited State Processes in Condensed Matter,2007(0):567-570. |
| [15] | 莫春兰,方文卿,王立,刘和初,周毛兴,江风益.硅衬底GaN基LED的研究进展[J].液晶与显示,2005(05):422-429. |
| [16] | 宋晓岚,刘宏燕,杨海平,张晓伟,徐大余,邱冠周.纳米SiO2浆料中半导体硅片的化学机械抛光速率及抛光机理[J].硅酸盐学报,2008(08):1187-1194. |
| [17] | Jian-Bin Chiu;Cheng-Ching Yu;Shih-Haur Shen .Application of soft landing to the process control of chemical mechanical polishing[J].Microelectronic engineering,2003(3):344-356. |
| [18] | Fu M S;Wei L H;Li Y H;Zhon X Z Hao S Y Li Y X .Surface charge tuning of ceria particles by titanium doping:Towards significantly improved polishing performance[J].Solid State Sciences,2009,11:2133. |
| [19] | 危亮华,傅毛生,李艳花,周雪珍,周新木,焦晓燕,李永绣.氯化钠和六偏磷酸钠对氧化铈抛光ZF7玻璃的协同增强作用[J].过程工程学报,2008(06):1241-1244. |
| [20] | 傅毛生,李永绣,陈伟凡,危亮华,胡建东.Ce0.8Zr0.2O2固溶体磨料对ZF7光学玻璃抛光性能的改善[J].摩擦学学报,2009(02):180-185. |
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