介绍了二硅化钼低温氧化的研究进展，对当今几种二硅化钼材料低温氧化发生“Ｐｅｓｔｉｎｇ”现象的机理模型及改善低温抗氧化的方法进行了评述，在此基础上提出了今后的二硅化钼低温氧化研究的重点和方向．
The low temperature oxidation of MoSi2 was reviewed. The simultaneous oxidation of Mo and Si occurs at low temperature (<1000℃) with the
formation of MoO3 and SiO2, and this nonselective oxidation often leads to structural disintegration of MoSi2 (Pesting). Several models of the pesting
reaction were summarized as follows:(1) Grain boundary hardening mechanism; (2) Pore-and-crack oxidation mechanism; (3) Grain boundary diffusion and oxidation
mechanism. On these bases, some methods that prevent the occurrence of Pesting were proposed and elucidated, and some proposals for the low temperature
oxidation research of MoSi2 were suggested.
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