利用化学机械抛光方法对锇基片进行表面平坦化处理,通过自制抛光液研究不同表面活性剂对锇化学机械抛光效果的影响.采用电化学分析方法和X射线光电子能谱(XPS)仪分析表面活性剂对锇抛光的影响,利用原子力显微镜(AFM)观察抛光后锇的表面形貌.结果表明:加入四甲基氢氧化铵(TMAOH)后,金属锇的去除速率从5.8 nm/min降低到2.9 nm/min,同时锇表面粗糙度从2.1 nm上升到4.8 nm;聚乙二醇400 (PEG-400)、六偏磷酸钠(SHMP)、十二烷基磺酸钠(SDS)3种表面活性剂虽然可以提高金属锇的抛光速率,但是在改善锇表面质量方面并没有帮助;十二烷基硫酸钠(SLS)和十六烷基三甲基溴化铵(CTAB)不仅可以提高金属锇的抛光速率,而且可以得到更好的表面平坦化效果,其中十六烷基三甲基溴化铵效果更加明显,可以将锇表面粗糙度(Ra)降低到0.57 nm,同时将抛光速率提高到14.6 nm/min.
Osmium surface was planarized by chemical mechanical polishing (CMP),and the effect of different surfactants on the polishing was investigated via home-made slurries.The influence of surfactants on the process of CMP was studied by electrochemical dynamics and X-ray photoelectron spectroscopy,and the morphology of Os surface was characterized by atomic force microscopy (AFM).The results show that when adding TMAOH in slurry,the MRR of Os decreases from 5.8 to 2.9 nm/min and the surface roughness (Ra) increases from 2.1 to 4.8 nm;although PEG400,SHMP and SDS can increase the MRR,they cannot improve the surface quality;SLS and CTAB can increase the MRR and decrease the surface roughness,especially CTAB can increase MRR to 14.6 nm/min and decrease surface roughness (Ra) to 0.57 nm.
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