Si(111)衬底上六方YMnO3薄膜的制备与铁电性质

材料导报, 2010, 24(16): 18-34.

Si(111)衬底上六方YMnO3薄膜的制备与铁电性质

刘越峰 ^1, , 郑海务 ^2, , 马兴平 ^3, , 王超 ^4, , 张华荣 ^5, , 顾玉宗 ^6,

1.河南大学物理系微系统物理研究所,开封,475004;河南大学基础实验教学中心,开封,475004

2.河南大学物理系微系统物理研究所,开封,475004

3.河南大学物理系微系统物理研究所,开封,475004

4.河南大学物理系微系统物理研究所,开封,475004

5.河南大学物理系微系统物理研究所,开封,475004

6.河南大学物理系微系统物理研究所,开封,475004

基金项目: 河南省教育厅自然科学研究计划(2008B140003;2009A430002) 河南大学科研基金(07YBGG008) 国家自然科学基金(50802023) 河南省科技攻关重点项目(082102270039) 河南省高等学校青年骨干教师资助计划(2009GGJS-026)

关键词：六方YMnO3 , 薄膜 , Si(111) , 择优生长 , 电滞回线

Ferroelectric Property and Preparation of Hexagonal YMnO3 Thin Films Grown on Si (111) Substrate

采用化学溶液法在Si(111)衬底上制备了YMnO3薄膜.XRD结果表明,所制备的薄膜为六方纯相YMnO3,且具有部分择优取向生长.以Pt为顶电极,测试了YMnO3薄膜的电滞回线,结果表明,所制备的YMnO3薄膜具有良好的铁电性质.

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材料期刊网

Si(111)衬底上六方YMnO3薄膜的制备与铁电性质

Ferroelectric Property and Preparation of Hexagonal YMnO3 Thin Films Grown on Si (111) Substrate

参考文献