对高H2稀释比条件下热丝CVD法制备GeSi薄膜的工艺参数对薄膜的键结构的影响进行了研究.用Raman谱和FT-IR谱对薄膜中非极性键(Ge-Ge、Ge-Si和Si-Si)相对含量的变化和极性键(Ge-H、Ge-H2、Si-H等H键)相对含量的变化进行了分析.研究结果表明,热丝CVD工艺参数对制备的GeSi薄膜中非极性键和极性键的影响规律是不同的.热丝温度和锗烷硅烷流量比(RS/G)对非极性键相对含量的变化均有影响.随着热丝温度上升Ge-Si和Si-Si相对含量均增加.随着RS/G增加Si-Si相对含量一直增加,Ge-Si相对含量先增加,当RS/G>1.4时开始下降.但热丝温度和RS/G对H键的影响规律有很大不同:随着RS/G增加,Si-H键的相对含量增加,Ge-H和Ge-H2键的相对含量减少,而热丝温度对H键相对含量基本无影响.
参考文献
[1] | Brinza B M;Jongen J P H et al.[J].Thin Solid Films,2009,517:3588-3590. |
[2] | Doyle JR;Xu Y;Reedy R;Branz HM;Mahan AH .Film stoichiometry and gas dissociation kinetics in hot-wire chemical vapor deposition of a-SiGe : H[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2008(5):526-528. |
[3] | Schroeder B. .Status report: solar cell related research and development using amorphous and microcrystalline silicon deposited by HW(Cat)CVD[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2003(1/2):1-6. |
[4] | Xu Yueqin;Nelson B P;Gedvilas L M et al.[J].Thin Solid Films,2003,430:197-201. |
[5] | Jadkar SR.;Sali JV.;Kshirsagar ST.;Takwale MG. .The effect of substrate temperature on HW-CVD deposited a-SiGe : H films[J].Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites,2002(Pt.1):168-173. |
[6] | Yusoff A R M;Syahrul M N;Henkel K .[J].Journal of Physics,2007,69(02):285-300. |
[7] | 朱培喻,陈培毅,黎晨,罗广礼,贾宏勇,刘志农,钱佩信.UHV/CVD硅锗膜的Raman光谱分析[J].光谱学与光谱分析,2001(04):464-467. |
[8] | Isomura M.;Nakahata K.;Shima M.;Taira S.;Wakisaka K.;Tanaka M. Kiyama S. .Microcrystalline silicon-germanium solar cells for multi-junction structures[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2002(1/4):519-524. |
[9] | van Veenendaal P A T T;Schropp R E I .[J].Curr Opin Solids St M,2002,6:465-470. |
[10] | Soukup R J;Ianno N J;Pribil G et al.[J].Surface and Coatings Technology,2004,676:177-178. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%