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对高H2稀释比条件下热丝CVD法制备GeSi薄膜的工艺参数对薄膜的键结构的影响进行了研究.用Raman谱和FT-IR谱对薄膜中非极性键(Ge-Ge、Ge-Si和Si-Si)相对含量的变化和极性键(Ge-H、Ge-H2、Si-H等H键)相对含量的变化进行了分析.研究结果表明,热丝CVD工艺参数对制备的GeSi薄膜中非极性键和极性键的影响规律是不同的.热丝温度和锗烷硅烷流量比(RS/G)对非极性键相对含量的变化均有影响.随着热丝温度上升Ge-Si和Si-Si相对含量均增加.随着RS/G增加Si-Si相对含量一直增加,Ge-Si相对含量先增加,当RS/G>1.4时开始下降.但热丝温度和RS/G对H键的影响规律有很大不同:随着RS/G增加,Si-H键的相对含量增加,Ge-H和Ge-H2键的相对含量减少,而热丝温度对H键相对含量基本无影响.

参考文献

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