利用温度梯度法在NiMnCo-Cu-C体系、于5.5 GPa、1250℃条件下进行了宝石级金刚石单晶的生长研究,结果发现,Cu片在触媒中的放置位置和其在金属触媒中所占体积分数对宝石级金刚石单晶的生长具有明显影响.当Cu片放置在碳源和触媒之间时,将不会有充足的碳源扩散到籽晶上,晶体无法生长;但放在触媒中其他位置,体积分数适当时,不会对晶体生长有明显影响.随着Cu体积分数增加,优质晶体生长将变得困难,当体积分数在20%时,晶体有生长,但晶体内部跟表面明显存在由于包裹体存在造成的生长坑洞;当体积分数在40%左右时,晶体将不再生长.不过当Cu在触媒中的体积分数适当时,会降低碳源在触媒中的输运,从而对抑制自发核生长起到一定的作用.
参考文献
| [1] | Bundy F P;Strong H M;Wentorf R H .Methods and Mechanisms of Synthetic Diamond Growth[J].Chemistry and Physics of Carbon,1973,10:213. |
| [2] | WentoffR H .Some Studies of Diamond Growth Rates[J].Journal of Physical Chemistry,1971,75:1833. |
| [3] | Strong H M;Chrenko R M .Further Studies on Diamond Growth Rates and Physical Properties of Laberatory-made Diamond[J].Journal of Physical Chemistry,1971,75:1838. |
| [4] | Sumiya H;Toda N;Satoh S .High-pressure Synthesis of High-purity Diamond Crystals[J].Diamond and Related Materials,1996,5:1359. |
| [5] | Burns R C et al.Growth of High Purity Lerge Synthetic Diamond Crystals[J].Diamond and Related Materials,1999,8:1433. |
| [6] | ZANG Chuan-Yi,JIA Xiao-Peng,MA Hong-An,TIAN Yu,XIAO Hong-Yu.Effect of Regrown Graphite on the Growth of Large Gem Diamonds by Temperature Gradient Method[J].中国物理快报（英文版）,2005(09):2415-2417. |
| [7] | 臧传义,马红安,黄国锋,贾晓鹏.多余碳源的析出形式与宝石级金刚石单晶生长[J].人工晶体学报,2007(03):536-539,544. |
| [8] | ZANG Chuan-Yi,JIA Xiao-Peng,MA Hong-An,LI Shang-Sheng,TIAN Yu,XIAO Hong-Yu.Grow Large High-Quality Diamonds with Different Seed Surfaces[J].中国物理快报（英文版）,2006(01):214-216. |
| [9] | Singhal SK.;Kanda H. .TEMPERATURE DEPENDENCE OF GROWTH OF DIAMOND FROM A CU-C SYSTEM UNDER HIGH PRESSURE[J].Journal of Crystal Growth,1995(3/4):297-302. |
| [10] | KandaH;Akaishi M;Yamanka S .New Catalysts for Diamond Growth under High pressure and High Temperature[J].Applied Physics Letters,1994,65:784. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%