采用射频磁控溅射方法在玻璃基片上制备了镓掺杂氧化锌(Ga∶ ZnO)透明导电薄膜,通过XRD、XPS、四探针仪和分光光度计等表征技术,研究了衬底温度对Ga∶ ZnO薄膜结构、组分、光学和电学性质的影响.结果表明:所有样品均为具有(002)择优取向的高质量透明导电薄膜,其晶体结构和光电性能与衬底温度密切相关.当衬底温度为673 K时,所制备的Ga∶ ZnO薄膜具有最大的晶粒尺寸(72.6 nm)、最低的电阻率(1.3×10-3Ω·cm)、较高的可见∶ZnO薄膜的光学能隙,结果显示随着衬底温度的升高,薄膜的光学能隙单调增加.
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