铁电薄膜与半导体集成技术相结合而发展起来的铁电存储器与传统的半导体存储器相比有很多优点,其关键集成工艺技术有铁电薄膜制备技术、电极制备、刻蚀技术、氢阻技术、金属互连技术、钝化技术.简要介绍了这些工艺技术的研究现状,并讨论了相关工艺对性能的影响.
参考文献
[1] | Scott J F;朱劲松;吕笑梅.铁电存储器[M].北京:清华大学出版社,2004 |
[2] | 武德起,刘保亭,闫正,闫常瑜,赵庆勋.铁电薄膜及铁电存储器研究[J].河北大学学报(自然科学版),2005(02):225-230. |
[3] | 刘敬松,张树人,李言荣.铁电存储技术[J].物理与工程,2002(02):37-40. |
[4] | 王卓,杨长红.铁电薄膜及其应用技术的最新进展[J].新材料产业,2004(09):45-51. |
[5] | 周志刚,王耘波,王华,于军,谢基凡,郭冬云.铁电存储器研究进展[J].信息记录材料,2002(01):31-35. |
[6] | 王华,任鸣放.铁电存储器及研究进展[J].桂林电子工业学院学报,2000(03):37-40. |
[7] | 吴淼,胡明,王兴,阎实.铁电随机存储器的研究进展[J].压电与声光,2003(06):472-475. |
[8] | Naoya Inoue;Takeshi Nakura .Low thermal-budget process of sputtered-PZT[J].Capacitor Over Multilevel Metallization IEEE Transactions on Electron Devices,2003,50(10):2081. |
[9] | 陈志武,卢振亚.铁电薄膜材料及其相关问题研究进展[J].材料导报,2005(05):83-86. |
[10] | Park B H;Kang B S et al.Lanthanum-substituted bismuth titanate for use in non-volatile memories[J].Nature,1999,401:682. |
[11] | Chon U.;Jang HM.;Kim MG.;Chang CH. .Layered perovskites with giant spontaneous polarizations for nonvolatile memories - art. no. 087601[J].Physical review letters,2002(8):7601-0. |
[12] | Ezhilvalavan S;Samper V;Seng TW;Xue JM;Wang J .Ferroelectric properties and leakage current characteristics of radio-frequency-sputtered SrBi2(V0.1Nb0.9)(2)O-9 thin films[J].Journal of Applied Physics,2004(4):2181-2185. |
[13] | Song-Min NAM;Takaaki TSURUMI .In Situ Epitaxial Growth of Lead Zirconate Titanate Films by Bias Sputtering at High RF Power[J].Japanese journal of applied physics,2004(5a):2672-2676. |
[14] | Takeshi MATSUMOTO;Atsushi NIINO;Yasunori OHTSU;Tatsuya MISAWA;Akira YONESU;Hiroharu FUJITA;Shoji MIYAKE .Influence of Substrate Biasing on (Ba,Sr)TiO_3 Films Prepared by Electron Cyclotron Resonance Plasma Sputtering[J].Japanese journal of applied physics,2004(3):1144-1148. |
[15] | Lookman A Bowmanrm;Gregg J M .Thickness independence of true phase transition temperatures in barium strontium titanate films[J].Journal of Applied Physics,2004,96:555. |
[16] | Takahiro Oikawa;Hitoshi Morioka;Atsushi Nagai et al.Thickness scaling of poiycrystalline Pb (Zr,Ti)O3 films down to 35 nm prepared by metalorganic chemical vapor deposition having good ferroelectric properties[J].Applied Physics Letters,2004,85:1754. |
[17] | Sun Ho Jung;Choi Eun Seok;Lee Tae Kwon et al.Effect of high-temperature metal-organic chemical vapor deposition of Pb(Zr,Ti)O3 thin films on structural stabilities of hybrid Pt/IrO2/Ir stack and single layer Ir bottom electrodes[J].Japanese Journal of Applied Physics,2004,143:2651. |
[18] | Zhai Jiwei;Hung T F;Chen Haydn .Relaxor and nonlinear behaviors of SrTiO3/BaTiO3 muti-lavers derived by a sol-gel process[J].Applied Physics Letters,2004,85:2026. |
[19] | Maki K;Liu BT;So Y et al.Low-temperature fabrication of epitaxial ard random-oriented Pb(Zr,Ti)O3 capacitors with SrRuO3 electrodes on Si wafers[J].Integrated Ferroelectrics,2003,52:19. |
[20] | Kinam Kim;Yoon J. Song .Integration technology for ferroelectric memory devices[J].Microelectronics and reliability,2003(3):385-398. |
[21] | 王培英;余大年 .电极对PZT铁电薄膜性能的影响[J].压电与声光,1998,20(01):54. |
[22] | Mardare A I .Bottom electrode crystallization of PZT thin films for ferroelectric capacitors[J].Journal of the European Ceramic Society,2005,25:735. |
[23] | Takashi Nakamura;Yuichi Nakao .Preparation of Pb(Zr,Ti) O3 thin films on electrodes including IrO2[J].Applied Physics Letters,1994,65(12):1522. |
[24] | Tsai MS.;Tseng TY. .Effect of bottom electrodes on dielectric relaxation and defect analysis of (Ba0.47Sr0.53)TiO3 thin film capacitors[J].Materials Chemistry and Physics,1998(1):47-56. |
[25] | Lee Kwang Bae .Compositional dependence of the properties of ferroelectric Pb(ZrxTi1-x)O3 thin film capacitors deposited on single-layered PtRhOy electrode barriers[J].Ceramics International,2004,30:1543. |
[26] | Li Jiankang .Microstructure and electrical properties of Pb(Zr0.52Ti0.48)O3 ferroelectric films on different bottom electrodes[J].Materials Letters,2004,58:3447. |
[27] | 史鹏,姚熹,吴小清,张良莹.PZT铁电薄膜刻蚀的研究进展[J].压电与声光,2003(05):386-389. |
[28] | 包定华;张良莹;姚熹.铁电薄膜的微图形化研究[J].硅酸盐通报,1998(03):59. |
[29] | 杨轶,张宁欣,任天令,刘理天.集成铁电器件中的关键工艺研究[J].仪器仪表学报,2003(z2):192-193. |
[30] | 刘秦;林殷茵 .PZT薄膜微图形的制作精度的研究[J].压电与声光,1998,20(06):411. |
[31] | 李建康,姚熹.锆钛酸铅铁电薄膜的制备及在红外探测器中的应用[J].太原理工大学学报,2004(04):388-391. |
[32] | Kim S T;Kim J W;Jung S W .Electrical properties of PZT thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition[J].Materials Chemistry and Physics,1996,45:155. |
[33] | 娄利飞,肖斌,汪家友,杨银堂,李跃进.PZY铁电薄膜材料的ECR等离子体刻蚀研究[J].西安电子科技大学学报(自然科学版),2005(04):555-558,598. |
[34] | Kang Myoung-Gu;Kim Kyoung-Tae .Plasma-induced damage in PZT thin films etched by inductively coupled plasma[J].Thin Solid Films,2003,435:222. |
[35] | Shi Peng;Yao Xi .Effect of microstructure on reactive ion etching of sol-gel-derived PZT thin film[J].Ceramics International,2004(7):1215-1218. |
[36] | Shi Peng;Yao Xi;Zhang Liangying .Reactive ion etching of sol-gel derived BST thin film[J].Ceramics International,2004,30:1513. |
[37] | 刘秦,林殷茵,吴小清,张良莹,姚熹.铁电PbZr0.53Ti0.47O3薄膜的磁增强反应离子刻蚀[J].半导体学报,1999(11):1044. |
[38] | 魏朝刚,任天令,邵天奇,王小宁,李春晓,刘理天,朱钧.硅基PZT薄膜的制备与工艺损伤[J].清华大学学报(自然科学版),2003(04):557-560. |
[39] | Lee Eun Gu;Park Jin Seong .Influence of annealing on the ferroelectric properties of Pt/Pb(Zr,Ti)O3/Pt thin film capacitors[J].Thin Solid Films,1997,310:327. |
[40] | Lim Kyu-Tae;Koo Seong-Mo .Improvement in ferroelectric properties of Pt/PZT/Pt capacitors etched as a function of Ar/O2 gas mixing ratio into C12/CF4 plasma[J].Thin Solid Films,2004,459:71. |
[41] | Kim Kyoung-Tae;Kang Myoung-Gu .Study on the etching damage characteristics of PZT thin films after etching in Clbased plasma[J].Microelectronic Engineering,2004,71:294. |
[42] | Kang Myoung-Gu;Kim Kyoung-Tae .Recovery of plasmainduced damage in PZT thin film with O2 gas annealing[J].Thin Solid Films,2001,398:448. |
[43] | Shimamoto Y .H2 damage of ferroelectric Pb(Zr,Ti)O3thin-film capacitors--the role of catalytic and adsorptive activity of the top electrode[J].Applied Physics Letters,1997,70(23):3096. |
[44] | Han JP;Ma TP;YALE UNIV DEPT ELECT ENGN NEW HAVEN CT 06520. .Electrode dependence of hydrogen-induced degradation in ferroelectric Pb(Zr,Ti)O-3 and SrBi2Ta2O9 thin films[J].Applied physics letters,1997(9):1267-1269. |
[45] | Aggarwal S.;Tipton CW.;Ramesh R.;Drew HD.;Venkatesan T. Romero DB.;Podobedov VB.;Weber A.;Perusse SR. .Effect of hydrogen on Pb(Zr, Ti)O-3-based ferroelectric capacitors[J].Applied physics letters,1998(14):1973-1975. |
[46] | lkarashi N;Hosoi N .Ti-O coordination at a Pb(Zr,Ti)O3/Pt interface annealed in a hydrogen-containing ambient analyzed using spatially resolved electron energy-loss spectroscopy[J].Journal of Applied Physics,1999,85:7874. |
[47] | Ikarashi N. .Analytical transmission electron microscopy of hydrogen-induced degradation in ferroelectric Pb(Zr, Ti)O-3 on a Pt electrode[J].Applied physics letters,1998(14):1955-1957. |
[48] | Yoshihisa Nagano;Takumi Mikawa;Toshie Kutsunai;Shinya Natsume;Toshitaka Tatsuiiari;Toyoji Ito;Atsushi Noma;Tora Nasu;Shinichiro Hayashi;Hiroshige Hirano;Yasushi Gohou;Yuji Judai;Eiji Fujii .Embedded Ferroelectric Memory Technology With Completely Encapsulated Hydrogen Barrier Structure[J].IEEE Transactions on Semiconductor Manufacturing: A Publication of the IEEE Components, Hybrids, and Manufacturing Technology Society, the IEEE Electron Devices Society, the IEEE Reliability Society, the IEEE Solid-State Circuits Council,2005(1):49-54. |
[49] | S. Aggarwal;S. R. Perusse;C. J. Kerr .Recovery of forming gas damaged Pb(Nb,Zr,Ti)O_(3) capacitors[J].Applied physics letters,2000(7):918-920. |
[50] | Song Y J;Kim H H;Lee S Y et al.Integration and electrical properties of diffusion barrier for high density ferroelectric memory[J].Applied Physics Letters,1999,76:451. |
[51] | Song Y J;Koo B J;Lee J K et al.Electrical properties of highly reliable plug buffer layer for high-density ferroelectric memory[J].Applied Physics Letters,2002,80:2377. |
[52] | Johnson J A;Lisoni J G;Wouters D J .Developing a conductive oxygen barrier for ferroelectric integration[J].Microelectronic Engineering,2003,70:377. |
[53] | Jung Sang-Bae;Park Hyung-Ho;Kim Haecheon .Investigation of the bonding states of the SiO2 aerogel film/metal interface[J].Thin Solid Films,2004,447:575. |
[54] | Cellere G;Valentini M G;Caminati M et al.Infuence of process parameters on plasma damage during inter-metal dielectric deposition[J].Microelectronic Engineering,2004,71:133. |
[55] | Koo B J et al.Deposition-temperature-dependent stress of capping oxide and its effect on Pt/Pb(Zr1-xTix)O3/Pt ferroelectric capacitor[J].Applied Physics Letters,1999,74:2286. |
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