采用分子动力学模拟方法研究了300K入射能量150eV时,以不同角度(5°、30°、60°和75°)入射的SiF3+与SiC表面的相互作用过程.模拟中使用了用于Si-F-C体系的Tersoff-Brenner势能函数.模拟结果显示,入射SiF3+与SiC表面相互作用后会分解,分解率随着入射角度的增加而减小.分解产物除少量散射外,大部分会沉积在SiC表面,Si和F在SiC表面的平均饱和沉积量随入射角度的增加而减少.随着SiF3+不断轰击SiC表面,SiC表面会形成Si-F-C反应层,且反应层厚度随着入射角度的增加而减少.同时发现SiC中的Si原子较C原子更容易被刻蚀,与实验结果一致.当刻蚀达到稳定,入射角度为5°、30°、60°和75°时,C的刻蚀率分别约为0.026、0.038、0.018、0.005,Si的刻蚀率分别约为0.043、0.051、0.043和0.023.各入射角度下,产物分子种类主要为F、SiF和SiF2.F和SiF产物量随入射角度增加而增加,而SiF2产量随入射角度增加而减少.在入射角度等于5°和30°时,SixFvVz是主要的含C产物；而在入射角度等于60°和75°时,CF是主要的含C产物.在入射角度等于5°和30°时,SiF2是主要的含Si产物；在入射角度等于60°和75°时,SiF是主要的含Si产物.刻蚀主要通过化学增强的物理溅射进行.
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