用固相烧结工艺,制备了不同Ce掺量CaBi_(4-x)CexTi_4O_(15)的陶瓷样品.用X射线衍射对其显微结构进行了分析,并测试了样品的介电、铁电性能,研究了烧结温度对样品晶粒取向和铁电性能的影响.结果发现Ce掺杂未改变CaBi_(4-x)CexTi_4O_(15)的晶体结构,1150 ℃烧结所得样品中a轴取向晶粒较多,有利于样品的铁电性能;x=0.2为最佳掺量,样品剩余极化强度最大,2P_r=18.4 mC/cm~2 ,对应的矫顽场强度2E_c=99 kV/cm,相对介电常数ε_r=165,介电损耗tanδ=2×10~(-3).
Ceramic samples CaBi_(4-x)CexTi_4O_(15)(x=0, 0.05, 0.1, 0.15, 0.2, 0.25) were prepared by solid-state reaction method. Their structure was analyzed by X-ray diffraction, and their dielectric and ferroelectrics properties were measured. It is found that Ce-doping does not change the crystal structure of CaBi_4Ti_4O_(15). The remnant polarization (2P_r) increases at first but then decreases with the increase of Ce content. The 2P_r reaches a maximum value of 18.4 mC /cm~2 when x=0.2. The coercive field of CaBi_3.8Ce_0.2Ti_4O_(15) is 99 kV/cm. The dielectric and dielectric loss of CaBi_3.8Ce_0.2Ti_4O_(15) are 165 and 2×10~(-3) measured at 100 kHz, respectively. Effects of different sintering temperatures on the crystal orientation of the CaBi_3.8Ce_0.2Ti_4O_(15) ferroelectric ceramics were also studied. It is found that crystals developed entirely and a-axis orientation was enhanced at 1150 ℃.
参考文献
| [1] | Park B H;Kang B S;Bu S D et al.[J].Nature,1999,401:683. |
| [2] | Sim(O)es A Z;Ramírez M A;Gonzalez A H M et al.[J].Journal of Solid State Chemistry,2006,179:2206. |
| [3] | Yan Haixue;Li Chengen;Zhou Jiaguang et al.[J].Applied Physics Letters,2001,40:6501. |
| [4] | 范素华,张丰庆,胡广达,徐静,岳雪涛,张伟.CaxSr1-xBi4Ti4O15铁电陶瓷的制备及性能研究[J].稀有金属材料与工程,2007(z1):403-406. |
| [5] | Hu G D .[J].Journal of Applied Physics,2006,100:096109. |
| [6] | 朱骏,卢网平,刘秋朝,毛翔宇,惠荣,陈小兵.La掺杂SrBi4Ti4O15铁电材料性能研究[J].物理学报,2003(06):1524-1528. |
| [7] | 羌锋,朱骏,毛翔宇,陈小兵.Dy掺杂对Sr2Bi4Ti5O18铁电陶瓷性能的影响[J].物理学报,2005(11):5422-5427. |
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