报道了用低温等离子体直接氧化溅射金属铪膜的方法制备高介电HfO2薄膜.研究了退火温度及气氛对薄膜的结构和界面特性的影响.傅立叶变化红外测试结果表明:界面的主要成分为SiO2,氧气气氛下的高温退火将导致界面SiO2的不可控制的生长.高纯的N2退火导致了界面层的分解,引起Si-O键的振动峰位的轻微移动.
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