通过均相沉淀法制备了纳米CeO2和Al2O3粉体,研究了在相同抛光条件下纳米CeO2、Al2O3和SiO2磨料对硅片的抛光效果,用原子力显微镜观察了抛光表面的微观形貌并测量其表面粗糙度.结果表明:纳米CeO2磨料抛光后表面具有更低的表面粗糙度,在5 靘5 靘范围内表面粗糙度Ra值为0.240 nm,而且表面的微观起伏更趋向于平缓;考虑了纳米磨料在抛光条件下所发生的自身变形,其变形量相当于一部分抵消了纳米磨料嵌入基体材料的切削深度,而这个切削深度最终决定了抛光表面的粗糙度;分析指出这个变形量与纳米磨料的硬度成反比,硬度低的纳米磨料由于自身变形量大,导致切削深度小,抛光后表面的粗糙度值低.解释了在相同的抛光条件下不同硬度的纳米磨料具有不同的抛光表面粗糙度的原因.
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