使用电子束蒸发法在抛光Mo、石英和单晶硅衬底上沉积Ti薄膜,并用SPM、XRD及SEM对衬底及薄膜的表面形貌和微观结构进行了分析.结果表明:Ti膜的表面形貌和微观结构受衬底材料影响较大.抛光Mo衬底上的Ti膜表面有微小起伏,断面处发现Ti膜先在衬底形核,后以柱状颗粒的形式竖直向上生长;抛光石英衬底上的Ti膜表面平整,颗粒与界面清晰可见,在界面处有一层等轴晶;粗糙度最低的单晶硅基片上沉积的Ti膜表面反而最粗糙,通过XRD分析发现有TiSi2的峰存在.
Ti films were deposited on polished Mo,quartz and single crystal silicon substrate by electron beam evaporation.The surface morphology and microstructures of substrates and the thin films were analyzed by AFM,XRD and SEM.The results show that the Ti film's surface morphology and microstructure are greatly influenced by the substrate materials.The surface of the Ti film on the polished Mo substrates has some fluctuations;the Ti film nucleates on the substrate firstly,and then vertically grows upwards in the form of columnar grain.However,the surface of the Ti film on the polished quartz substrate is smooth,and the particles and the interfaces are clearly distinguished by the layer of equiaxed grains on the interface.Besides,the surface of the Ti film on the single crystal silicon substrate is the roughest one,although the surface of the crystal silicon is the smoothest one.There are peaks of TiSi2 controlled by Ti/Si interface silicide growth dynamics.
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