从光子晶体的角度研究了AAO/ZnO组装体的光子带隙和发光性能,并解释了该组装体中ZnO发光增强的原因.利用平面波法对AAO及AAO/ZnO组装体的带隙结构进行了研究,得到了该组装体在可见光范围内TE波和TM波的不同的禁带结构特征,讨论了晶格常数、填充比及填充介质的介电常数对带隙结构和禁戒波长的影响,找到了使AAO/ZnO组装体产生与ZnO的缺陷发光峰匹配的完全光子禁带的条件.
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