低温GaN形核层的形核速率对GaN外延薄膜晶体质量的影响

人工晶体学报, 2016, 45(4): 880-885.

低温GaN形核层的形核速率对GaN外延薄膜晶体质量的影响

廖建华 ^1, , 尚林 ^2, , 贾伟 ^3, , 余春燕 ^4, , 李天保 ^5, , 许并社 ^6,

1.太原理工大学新材料界面科学与工程教育部和山西省重点实验室,太原030024;太原理工大学新材料工程技术研究中心,太原030024

2.太原理工大学新材料界面科学与工程教育部和山西省重点实验室,太原030024;太原理工大学新材料工程技术研究中心,太原030024

3.太原理工大学新材料界面科学与工程教育部和山西省重点实验室,太原030024;太原理工大学新材料工程技术研究中心,太原030024

4.太原理工大学新材料界面科学与工程教育部和山西省重点实验室,太原030024;太原理工大学新材料工程技术研究中心,太原030024

5.太原理工大学新材料界面科学与工程教育部和山西省重点实验室,太原030024;太原理工大学新材料工程技术研究中心,太原030024

6.太原理工大学新材料界面科学与工程教育部和山西省重点实验室,太原030024;太原理工大学新材料工程技术研究中心,太原030024

基金项目: 山西省科技创新重点团队(2012041011) 国家自然科学基金(61475110,61404089,21471111) 山西省自然科学基金(2014021019-1,2014011016-6)

关键词：形核速率 , 形核层 , GaN , 金属有机化学气相沉积

Effect of Nucleation Rate of Low Temperature GaN Nucleation Layer on the Crystal Quality of GaN Epitaxial Thin Films

Keywords： nucleation rate , nucleation layer , GaN , metal-organic chemical vapor deposition (MOCVD)

采用金属有机化学气相沉积方法系统研究了在蓝宝石衬底上低温GaN形核层的形核速率对GaN外延薄膜晶体质量的影响机理.利用高分辨X射线衍射仪、原子力显微镜、光致发光光谱和Hall测试仪表征材料的位错密度、表面形貌以及光、电学性能.研究结果表明随着形核速率的增加,GaN形核层更倾向于三维生长模式;当形核速率达到1.92(A)/s时退火后生成尺寸为100 nm宽、32 nm高的均匀形核岛,随后生长的未掺杂GaN外延薄膜层的螺型和刃型位错密度以及黄带峰强度达到最小值,并且其具有最高的载流子迁移率和最低的载流子浓度.

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