通过中频非平衡磁控溅射Ti80Si20复合靶在氩气和甲烷混合气氛中沉积Ti-Si-C复合薄膜.采用X射线衍射仪、Raman光谱和X射线光电子能谱分析薄膜微结构.结果显示:制备的薄膜为非晶碳(a-C∶Si∶H)包裹约10 nm TiC晶粒的复合结构,氩离子溅射刻蚀对XPS分析结果有显著影响.随氩离子刻蚀溅射刻蚀时间增加,薄膜表面C、O原子含量明显降低,而Ti、Si原子含量增加.氩离子溅射刻蚀导致薄膜非晶碳相发生石墨化转变,即sp3C-C(H)/sp2C-C比率减小,同时,C-Ti*/C-Ti和C-(Ti+Ti*)/C-C强度比明显增加.
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