材料期刊网

For the aim of synthesis of the carbon-iodine compound, the preparation of iodine-included carbon using RF plasma CVD was studied. Iodine-included carbon was synthesized on Si substrate using ICP type RF plasma CVD apparatus. C2H5OH and I2 dissolved C2H5OH was used as reactant gases. As a result, surface morphologies of Iodine included carbon films showed flat surfaces for each samples. On the structure of films estimated by Raman spectroscopy, amorphous carbon was recognized. And I2 peaks were observed in XPS spectra. As a result of friction test, friction coefficient of the sample growth with C2H5OH showed about 0.45. On the other hand, that of the sample with I2-C2H5OH showed about 0.3 and decrease of friction coefficient was recognized. Iodine inclusion for carbon materials can be achieved by RF plasma CVD using an I2-C2H5OH reactant. The coefficient of iodine-included carbon showed lower than of without iodine.