采用氧离子束对电子束蒸发制备且退火后的氧化铟锡(ITO)薄膜进行轰击后处理.经XPS检测发现氧元素在薄膜内含量增加,在深度方向上的梯度差下降.表面Sn4+含量增加,即掺杂离子浓度和载流子浓度提高,从而使薄膜方块电阻显著降低.当氧离子继续轰击时,薄膜的方块电阻保持平稳;同时,透过率曲线蓝移,紫外波段(300～400 nm)的平均透过率提高而可见光范围内(400 ～800 nm)的平均透过率略有下降,这种变化缘于薄膜的禁带宽度与折射率的增加.
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