采用水热法,以固相烧结的化学计量比(2Bi2 O3∶3SiO2)的玻璃态Bi4Si3O12做培养料,以NaOH溶液为矿化剂,研究了在水热体系下形成Bi4Si3O12晶体的相区.结果发现,在生长温度为380 ~ 500℃,矿化剂浓度为1.5 ~4 mol/L时,自发成核生成的晶粒均为Bi4Si3O12和Bi12SiO20两种物相.通过在矿化剂溶液中外加一定量的SiO2,得到完全纯相的Bi4Si3O12,并生长出尺寸超过8 mm的Bi4Si3O12单晶.无论在矿化剂溶液中是否添加SiO2,生长的Bi4Si3O12都呈四面体形状,显露面以{112}面族为主,Bi4Si3O12晶体的这一结晶习性能够用周期性键链(PBC)理论予以解释.
参考文献
[1] | Kobayashi M.;Harada K.;Yamaga I.;Ishii M. .BISMUTH SILICATE BI4SI3O12, A FASTER SCINTILLATOR THAN BISMUTH GERMANATE BI4GE3O12[J].Nuclear Instruments and Methods in Physics Research, Section A. Accelerators, Spectrometers, Detectors and Associated Equipment,1996(1/2):45-50. |
[2] | Kobayashi M.;Hirose Y.;Ishii M.;Yamaga I.;Harada K. .LARGE-SIZE BISMUTH SILICATE (BI4SI3O12) SCINTILLATING CRYSTALS OF GOOD QUALITY[J].Nuclear Instruments and Methods in Physics Research, Section A. Accelerators, Spectrometers, Detectors and Associated Equipment,1997(2/3):392-400. |
[3] | Fei YT.;Sun RY.;Xu JY.;Ishii M.;Fan SJ. .Bridgman growth of Bi4Si3O12 scintillation crystals and doped effects on radiation resistance[J].Progress in Crystal Growth and Characterization of Materials,2000(1/4):189-194. |
[4] | M. Ishii;K. Harada;Y. Hirose .Development of BSO (Bi_4Si_3O_12) crystal for radiation detector[J].Optical materials,2002(1):201-212. |
[5] | A. Barysevich;V. Dormenev;A. Fedorov;M. Glaser;M. Kobayashi;M. Korjik;F. Maas;V. Mechinski;R. Rusack;A. Singovski;R. Zoueyski.Radiation damage of heavy crystalline detector materials by 24 GeV protons[J].Nuclear Instruments and Methods in Physics Research, Section A. Accelerators, Spectrometers, Detectors and Associated Equipment,2013:231-234. |
[6] | Fei YT.;Sun RY.;Ishii M.;Fan SJ. .Study on phase diagram of Bi2O3-SiO2 system for Bridgman growth of Bi4Si3O12 single crystal[J].Progress in Crystal Growth and Characterization of Materials,2000(1/4):183-188. |
[7] | Hua, Jiang;Kim, H.J.;Rooh, Gul;Park, H.;Kim, Sunghwan;Cheon, JongKyu .Czochralski growth and scintillation properties of Bi_4Si_3O_(12) (BSO) single crystal[J].Nuclear Instruments and Methods in Physics Research, Section A. Accelerators, Spectrometers, Detectors and Associated Equipment,2011(1):73-76. |
[8] | 贾彩霞,江元汝,谢会东,李兆.水热法制备Bi4Si3O12粉体[J].应用化工,2011(08):1357-1359. |
[9] | Xiaoling He;Weining Zhou;Changlong Zhang;Haitao Zhou;Zhanggui Hu;Hande Huo;Yanbin Zuo;Fuhua Lu;Jinliang Wang;Shijie Qin;Dongping Li;Haixia Zhang;Yixin Chen .Effect of SiO_2 on Bi_(12)SiO_(20) crystals grown by hydrothermal technology[J].Journal of Crystal Growth,2011(1):900-903. |
[10] | Xiaoling He;Haitao Zhou;Weining Zhou;Zhanggui Hu;Changlong Zhang;Hande Huo;Jinliang Wang;Yanbin Zuo;Fuhua Lu .Solubility and optical activity of Bi_(12)SiO_(20) crystals[J].Journal of Crystal Growth,2012(1):182-187. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%