采用传统固相烧结工艺,制备了掺杂量分别为0.00～1.00、0.00～0.06的La、V掺杂SrBi4Ti4O15铁电陶瓷.X射线衍射结果显示,La、V对SrBi4Ti4O15的A、B位掺杂都未影响材料的晶体结构.A、B位掺杂均改善了材料的铁电性能.La掺杂量为0.25时,SBTi的剩余极化(2Pr)增大50%,同时矫顽场(2Ec)下降了25%.少量的V取代SBTi的B位Ti离子后,2Ec虽无明显变化,但2Pr却可增大近两倍,并且不影响材料的居里温度,而A位掺杂导致了材料的居里温度的明显下降.这与A、B位掺杂对材料晶格畸变程度的影响有关.
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