采用电子束蒸发技术在AlN衬底上蒸镀Ti/Ni双层金属化薄膜,通过SEM、EDS和AES等方法分析抛光AlN表面状态及与金属化薄膜间的相互作用.结果表明:离子束清洗可去除AlN衬底表面疏松层,改变AlN衬底表面状态,提高衬底表面能.结合热蒸发原子的作用,膜基界面处Al、N和Ti元素之间产生相互扩散现象,AlN陶瓷和Ti膜的附着机制由未清洗前的简单附着改变为扩散附着,极大提高了金属化薄膜粘结性能,其拉脱强度达300 MPa以上,且无需后续退火处理.
参考文献
| [1] | 张兆生,卢振亚,陈志武.电子封装用陶瓷基片材料的研究进展[J].材料导报,2008(11):16-20. |
| [2] | GAO Jie,LI Changrong,WANG Na,DU Zhenmin.Study on the interfacial reactions of Ti/AlN joints[J].稀有金属（英文版）,2008(02):175-180. |
| [3] | 颜宁瑶 .从TiN铝化、Ti3Al氮化及TiN/Ti3Al界面反应探讨AlN/Ti界面生成机构[D].台湾:国立交通大学,2007. |
| [4] | Ghia-Hsiang Chiu;Chien-Cheng Lin .Microstructural Development of the AlN/Ti Diffusion Couple Annealed at 1000 deg C[J].Journal of the American Ceramic Society,2008(4):1273-1280. |
| [5] | He Xiangjun;Tao Kun;Fan Yudian .INTERFACIAL REACTIONS OF METAL FILMS WITH AlN SUBSTRATE[J].Transactions of Nonferrous Metals Society of China,1996(2):81-85. |
| [6] | YASUMOTO T;YAMAKAWA K;IWASE N;SHINOSAWA N .Reaction between AlN and metal thin films during high temperature annealing[J].Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi / Journal of the Ceramic Society of Japan,1993,101(09):969-973. |
| [7] | He XJ.;Du Y.;Tao K.;Fan YD.;Yang S. .REACTION LAYER FORMATION AT THE INTERFACE BETWEEN TI OR ZR AND ALN[J].Physica Status Solidi, A. Applied Research,1996(1):99-106. |
| [8] | Chiu CH;Lin CC .Formation mechanisms and atomic configurations of nitride phases at the interface of aluminum nitride and titanium[J].Journal of Materials Research,2008(8):2221-2228. |
| [9] | I. Shalish;Yoram Shapira .Thermal stability of a Ti-Si-N diffusion barrier in contact with a Ti adhesion layer for Au metallization[J].Journal of Vacuum Science & Technology, B. Microelectronics and Nanometer Structures: Processing, Measurement and Phenomena,1999(1):166-173. |
| [10] | HOGLUND C;BECKERS M;SCHELL N;BORANY J V BIRCH J HULTMAN L .Topotaxial growth of Ti2AlN by solid state reaction in AlN/Ti(0001) multilayer thin films[J].Applied Physics Letters,2007,90:174106-1-174106-3. |
| [11] | 刘刚,王从香,符鹏.AlN基板表面处理对薄膜附着力的影响[J].电子元件与材料,2005(09):45-47. |
| [12] | 黄岸兵;崔嵩;张浩.功率电路基片首推氮化铝陶瓷[J].世界产品与技术,2000(06):50-52. |
| [13] | 张大伟,张东平,邵建达,王英剑,范正修,范瑞瑛.离子束清洗在激光薄膜中的应用[J].光学技术,2005(02):238-240. |
| [14] | 刘金声.离子束沉积薄膜技术与应用[M].北京:国防工业出版社,2003:61-103. |
| [15] | CARTER W B .Titamium and tantalum coatings on aluminum nitride[J].Journal of Vacuum Science and Technology A:Vacuum Surfaces and Films,1992,10(06):3460-3464. |
| [16] | 冯亮,李金山,黄磊,常辉,崔予文,周廉.Ti-Mo二元合金在β相区的互扩散行为[J].中国有色金属学报,2009(10):1766-1771. |
| [17] | 田民波.薄膜技术与薄膜材料[M].北京:清华大学出版社,2006:223-226. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%