本文以Si(100)为衬底,利用水平式常压冷壁化学气相沉积(APCVD)系统在不同温度(1100～1250℃)下制备的“缓冲层”上生长了3C-SiC薄膜.结果表明,薄膜为外延生长的单一3C-SiC多型,薄膜表面呈现“镶嵌”结构特征,Si/3C-SiC界面平整无孔洞.碳化温度对薄膜的结晶质量和表面粗糙度有显著的影响,当碳化温度低于或高于1200℃时,薄膜的结晶质量有所降低,且随着碳化温度的升高,薄膜表面粗糙度呈现增大的趋势.当在1200℃下制备的“缓冲层”上生长薄膜时,可以获得最优质量的3C-SiC外延膜,其(200)晶面摇摆曲线半峰宽约为0.34°,表面粗糙度约为5.2nm.
参考文献
| [1] | Gupta A;Sengupta J;Jacob C .An atomic force microscopy and optical microscopy study of various shaped void formation and reduction in 3C-SiC films grown on Si using chemical vapor deposition[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2008(8):1669-1676. |
| [2] | E. Polychroniadis;M. Syvaejaervi;R. Yakimova;J. Stoemenos .Microstructural characterization of very thick freestanding 3C-SiC wafers[J].Journal of Crystal Growth,2004(1/4):68-75. |
| [3] | M. Portail;M. Zielinski;T. Chassagne;S. Roy;M. Nemoz .Comparative study of the role of the nucleation stage on the final crystalline quality of (111) and (100) silicon carbide films deposited on silicon substrates.[J].Journal of Applied Physics,2009(8):083505-1-083505-7. |
| [4] | B. Burkland;Z. Y. Xie;J. H. Edgar .Effects of the Addition of Silane during Carbonization on the Epitaxy of 3C-SiC on Si[J].Journal of the Electrochemical Society,2002(9):G550-G554. |
| [5] | BYEUNG C. KIM;JOHN COY;SANGHO KIM;MICHAEL A. CAPANO .Heteroepitaxial 3C-SiC on Si with Various Carbonization Process Conditions[J].Journal of Electronic Materials,2009(4):581-585. |
| [6] | Biao Shi;Xue-Chao Liu;Ming-Xing Zhu;Jian-Hua Yang;Er-Wei Shi.Effect of propane/silane ratio on the growth of 3C-SiC thin films on Si(100) substrates by APCVD[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2012:685-690. |
| [7] | Wei-Cheng Lien;Nicola Ferralis;Carlo Carraro;Roya Maboudian .Growth of Epitaxial 3C-SiC Films on Si(100) via Low Temperature SiC Buffer Layer[J].Crystal growth & design,2010(1):36-39. |
| [8] | Nakashima S.;Harima H. .RAMAN INVESTIGATION OF SIC POLYTYPES[J].Physica Status Solidi, A. Applied Research,1997(1):39-64. |
| [9] | W.L. Zhu;J.L. Zhu;S. Nishino;G. Pezzotti .Spatially resolved Raman spectroscopy evaluation of residual stresses in 3C-SiC layer deposited on Si substrates with different crystallographic orientations[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2006(6):2346-2354. |
| [10] | Ferro G.;Vincent H.;Thevenot V.;Tran MD.;Cauwet F.;Bouix J.;Monteil Y. .ATOMIC FORCE MICROSCOPY GROWTH MODELING OF SIC BUFFER LAYERS ON SI(100) AND QUALITY OPTIMIZATION[J].Journal of Applied Physics,1996(8):4691-4702. |
| [11] | Shi, B.;Zhu, M.-X.;Liu, X.-C.;Yang, J.-H.;Shi, E.-W. .The surface morphological evolution of ultrathin SiC buffer layer grown on Si (100) substrate by atmospheric pressure chemical vapor deposition[J].Journal of Materials Research,2013(1):113-119. |
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