采用湿化学工艺在硅衬底上成功地制备了结构致密、均匀且无龟裂的SrNbxTi1-xO3薄膜.金属盐的冰醋酸溶液经回流再加入乙酸酐除去无机阴离子和结晶水,形成的金属醋酸盐与适当的络合剂形成的多配体络合物经部分水解生成的羟基化合物M(OH)n-x(L)x(L=C4H6O6或AcAc,M=Sr或Ti或Nb)经羟基聚合形成SrNbxTi1-xO3簇状溶胶.丙三醇抑制了羟基金属过度聚合,甲基纤维素(MCL)使SrNbxTi1-xO溶胶具有网状结构.SrNb0.1Ti0.9O3(SNTO)凝胶薄膜经过650～750℃/30min退火形成假立方钙钛矿结构.应用XRD、SEM和TEM对薄膜结构和形貌进行表征.室温下SNTO薄膜的电阻率为54μΩ·cm,而在160K到室温之间薄膜电阻率随温度的变化遵从p=p0+AT2.分析结果表明:Nb5+离子的施主掺杂改变了禁带宽度,实现了SrTiO3的n-型半导体化.SNTO(100)/Pt/Ti/SiO2/Si衬底上的Pb(Zr0.52Ti0.48)O3(PZT)薄膜的择优取向明显,较之于Pt/Ti/SiO2/Si衬底上的PZT薄膜有良好的铁电性,其剩余极化强度也比PZT/Pt(111)/Ti/SiO2/Si的大.
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