利用激光脉冲沉积法(PLD)制备了Na掺杂ZnO∶ Nax薄膜(0≤x≤0.1),并较全面地研究了Na含量对ZnO∶ Nax薄膜结晶质量和光电性能的影响.研究结果表明Na含量低于5％时,ZnO∶ Nax薄膜能够保持良好的c轴择优取向生长.随着Na含量的增加,薄膜由本征n型转变为p型.并且当Na含量为2％时,获得p型性能良好的薄膜:电阻率为53.5Ωcm,迁移率为0.55cm2V-1 s-1,空穴浓度为2.1×1017cm-3.结合XPS测试结果,我们认为p型转变是因为Na掺杂在ZnO中主要形成受主态NaZn.PL测试表明ZnO∶ Na0.02薄膜在377nm处具有良好的室温紫外带边发射.
参考文献
| [1] | R.E.Service .Materials science-Will UV lasers beat the blues[J].Science,1997,276(5314):895-895. |
| [2] | Yungryel Ryu;Tae-Seok Lee;Jorge A. Lubguban;Henry W. White;Bong-Jin Kim;Yoon-Soo Park;Chang-Joo Youn .Next generation of oxide photonic devices: ZnO-based ultraviolet light emitting diodes[J].Applied physics letters,2006(24):241108-1-241108-3-0. |
| [3] | Quan-Bao Ma;Zhi-Zhen Ye;Hai-Ping He;Shao-Hua Hu;Jing-Rui Wang;Li-Ping Zhu;Yin-Zhu Zhang;Bing-Hui Zhao .Structural, electrical, and optical properties of transparent conductive ZnO:Ga films prepared by DC reactive magnetron sputtering[J].Journal of Crystal Growth,2007(1):64-68. |
| [4] | V. Bhosle;A. Tiwari;J. Narayan .Metallic conductivity and metal-semiconductor transition in Ga-doped ZnO[J].Applied Physics Letters,2006(3):032106-1-032106-3-0. |
| [5] | O. Bamiduro;H. Mustafa;R. Mundle;R. B. Konda;A. K. Pradhan .Metal-like conductivity in transparent Al:ZnO films[J].Applied physics letters,2007(25):252108-1-252108-3-0. |
| [6] | Woo-Jin LEE;Joongoo KANG;K.J.CHANG .p-Type Doping and Compensation in ZnO[J].Journal of the Korean Physical Society,2008(1):196-201. |
| [7] | C.H.Park;S.B.Zhang;S.H.Wei .Origin of p-type doping difficulty in ZnO:The impurity perspective[J].Physical Review B,2002,66(07):073202. |
| [8] | Hwang DK;Kang SH;Lim JH;Yang EJ;Oh JY;Yang JH;Park SJ .p-ZnO/n-GaN heterostructure ZnO light-emitting diodes[J].Applied physics letters,2005(22):2101-1-2101-3-0. |
| [9] | W. Z. Xu;Z. Z. Ye;Y. J. Zeng;L. P. Zhu;B. H. Zhao;L. Jiang;J. G. Lu;H. P. He;S. B. Zhang .ZnO light-emitting diode grown by plasma-assisted metal organic chemical vapor deposition[J].Applied physics letters,2006(17):173506-1-173506-3-0. |
| [10] | L. J. Mandalapu;Z. Yang;S. Chu;J. L. Liu .Ultraviolet emission from Sb-doped p-type ZnO based heterojunction light-emitting diodes[J].Applied physics letters,2008(12):122101-1-122101-3-0. |
| [11] | G.Y.Huang;C.Y.Wang;J.T.Wang .First-principlesstudy ofdiffusion of Li,Na,K and Ag in ZnO[J].J Phys -Condes Matter,2009,21:345802. |
| [12] | Lin, SS;Lu, JG;Ye, ZZ;He, HP;Gu, XQ;Chen, LX;Huang, JY;Zhao, BH .p-type behavior in Na-doped ZnO films and ZnO homojunction light-emitting diodes[J].Solid State Communications,2008(1/2):25-28. |
| [13] | Liu, W;Xiu, FX;Sun, K;Xie, YH;Wang, KL;Wang, Y;Zou, J;Yang, Z;Liu, JL .Na-Doped p-Type ZnO Microwires[J].Journal of the American Chemical Society,2010(8):2498-2499. |
| [14] | Guangxia Hu;Hao Gong;E. F. Chor;Ping Wu .Properties of p-type and n-type ZnO influenced by P concentration[J].Applied physics letters,2006(25):251102-1-251102-3-0. |
| [15] | S.B.Zhang;S.H.Wei;A.Zunger .Intrinsic n-type versus ptype doping asymmetry and the defect physics of ZnO[J].Physical Review B,2001,63(07):075205. |
| [16] | S. S. Lin;H. P. He;Y. F. Lu;Z. Z. Ye .Mechanism of Na-doped p-type ZnO films: Suppressing Na interstitials by codoping with H and Na of appropriate concentrations[J].Journal of Applied Physics,2009(9):093508-1-093508-5. |
| [17] | C.D.Wagner;W.M.Riggs;L.E.Davies.Handbook of X-Ray Photoelectron Spectroscopy[M].Perkin Elmer:Eden Prairie,MN,1979:51. |
| [18] | E.C.Lee;K.J.Chang .Possible ptype doping with group-Ⅰ elements in ZnO[J].Physical Review B,2004,70(11):115210. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%