欢迎登录材料期刊网

材料期刊网

高级检索

利用Fourier变换红外光谱技术研究了高剂量快中子辐照直拉单晶硅中的辐照缺陷.研究表明,当中子剂量超过1018n·cm-2,在硅晶体会引入大量的非晶区和少量的非晶层(由连续的非晶区组成),分别在FTIR光谱中引入485和529.2 cm-1两个吸收带.退火实验表明,非晶区(485 cm-1)经150℃热处理后开始再结晶,有效的退火温度约为300℃;非晶层(529.2 cm-1)经300℃热处理后开始再结晶,有效的退火温度为500℃左右.

参考文献

[1] Kuhnke M.;Fretwurst E.;Lindstrom G. .Defect generation in crystalline silicon irradiated with high energy particles[J].Nuclear Instruments and Methods in Physics Research, Section B. Beam Interactions with Materials and Atoms,2002(0):144-151.
[2] 王启元,林兰英,王建华,邓惠芳,谭利文,王俊,蔡田海,郁元桓.单晶硅中氢与辐照缺陷的相互作用[J].半导体学报,2002(01):43-48.
[3] Y.X. Li;H.Y. Guo;B.D. Liu;T.J. Liu;Q.Y. Hao;C.C. Liu;D.R. Yang;D.L. Que .The effects of neutron irradiation on the oxygen precipitation in Czochralski-silicon[J].Journal of Crystal Growth,2003(1/4):6-9.
[4] 马巧云,陈贵锋,马晓薇,薛晶晶,郝秋艳.快中子辐照直拉硅中的氧沉淀及诱生缺陷[J].硅酸盐学报,2010(10):1927-1930.
[5] Donnelly SE.;Birtcher RC.;Carter G.;Vishnyakov VM. .The effects of radiation damage and impurities on void dynamics in silicon[J].Nuclear Instruments and Methods in Physics Research, Section B. Beam Interactions with Materials and Atoms,2001(0):132-139.
[6] Kuhnke M.;Fretwurst E.;Lindstrom G. .Defect generation in crystalline silicon irradiated with high energy particles[J].Nuclear Instruments and Methods in Physics Research, Section B. Beam Interactions with Materials and Atoms,2002(0):144-151.
[7] 张维连.直拉硅单晶中子辐照后的退火研究[J].人工晶体学报,1994(03):191.
[8] 卢武星,吴瑜光.MeV高能离子注入Si的研究[J].核物理动态,1997(03):181.
[9] 杨帅,徐建萍,邓晓冉,陈贵锋.快中子辐照直拉硅中的空位型缺陷[J].硅酸盐学报,2013(06):808-811.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%