采用电子束蒸发技术制备碳化硼薄膜,利用X射线衍射(XRD)分析了薄膜的结构,测量了薄膜的X射线光电子能谱(XPS),并利用原子力显微镜(AFM)对薄膜进行表面分析.XRD结果表明:薄膜的结晶性随着衬底温度的升高逐渐转好,在较低的衬底温度下制备出多晶碳化硼薄膜.XPS分析得到了碳化硼薄膜表面的化学成分和结构特性,其主要成分为B_4C.AFM结果表明,薄膜表面光滑平整、均匀致密,随着衬底温度的升高薄膜均方根(RMS)粗糙度逐渐增大.
Boron carbide thin films were deposited on Si (100) substrates by using electron beam evaporation. Subsequently, the film samples were characterized by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The surface morphology was analyzed with atomic force microscope (AFM). The results of XRD show that the crystallization of the boron carbide thin films meliorate gradually with increasing substrate temperature and crystalloid of the boron carbide thin films are got at more than 150 ℃ of the substrate temperature. The results of XPS show that the films' surface chemistry component is mostly B_4C, and the boron carbide thin film's chemistry component and structural characteristic are obtained by XPS. The charts of AFM show that the thin films are compact and smooth, the RMS roughness of the boron carbide thin film rises gradually with increasing substrate temperature.
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