用Ａｕｇｅｒ电子能谱研究铂薄膜中氧和碳杂质的行为．结果表明，氧和碳受它们在铂膜中扩散过程限制．在１０００℃上、下两个温区，氧具有不同的扩散激活能，分别等于０．９８和０．４４ｅＶ；５５０─１０００℃温度范围内，氧向膜外扩散，使铂膜净化；１０００─１２００℃温度范围内，氧向膜内扩散，使铂膜氧化．在所研究的整个温度范围内，碳的扩散激活能等于０．５２ｅｖ，其扩散行为和氧相同，且随着氧含量的增减而增减．
Behaviours of O_2 and C in Pt thin film were observed by Auger spectroscopy to be limited by diffusion.The activation energy of O_2 diffusion into Pt is different,saying,0.98 and 0.44 eV at higher and lower than 1000℃ respectively.In a range of 550－1000℃ or 1000-1200℃,O_2 diffuses outward or inward Pt film,which may be purified or oxidized respectively.In the temperature range studied,the activation energy of C diffusion is equal to 0.52 eV.Its diffusion behaviour is identical to that of O_2 and the concentration of C in Pt film increases or decreases with increasing or decreasing O_2 content respectively.
参考文献
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