分析了外加直流电场对Al和Ni诱导非晶硅(a-Si)薄膜横向结晶速率的影响,指出,在热处理条件下,Al和Ni能加快诱导a-Si薄膜横向结晶的速率;适当强度的外加电场能明显加快金属诱导a-Si横向结晶速率;Al和Ni诱导a-Si结晶速率的增大主要是电场提高了扩散物的迁移率.但场强超过某临界值后该速率降低.基于电迁移效应,对此结果作了较合理的解释.结合文献,提出一经验公式,并用MATLAB模拟了外电场中Al和Ni诱导a-Si薄膜横向结晶速率曲线.
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