利用放电等离子烧结技术制备了三元半导体CuGaTe2.XRD分析结果表明,该半导体为单相化合物CuGaTe2,带隙宽度(Eg)约为1.0eV,与Ga2 Te3(1.65eV)的带隙相比明显变窄.在701K时电导率达到1.6×104/(Q·m).电导率的显著提高与带隙变窄密切相关.晶格热导率占总热导率(κ)的主要部分,κ值由室温时的3.64W/(m·K)降低到701K时的1.1W/(m·K),并基本符合∝T-1关系,即声子散射基本受Umklapp过程控制.在701K时该三元化合物的最大热电优值ZT为0.49,而Ga2 Te3在860K时的最大ZT值为0.16.
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