利用对向靶溅射（ＦＴＳ）沉积出（１１１）择优取向的单相ＴｉＮ膜，膜硬度（ＨＶ）最高可达３８００，择优取向随基板偏压增高，可由（１１１）转向（２００），晶格常数随氮气分压增高而增大，这是氮原子进入四面体间隙引起的。
The hardness (HV) of one of single-phase and (111) preferred orientation TiN films that were prepared by facing targets sputtering (FTS), is as high as 3800, the preferred orientation can change from ( 111 ) to (200) with the increase of substrate bias voltage, the lattice parameters vary with the pressure ratio of N_2 to Ar, the lattice expansion can be explained by the mechanism of interstitial N atom into the tetrahedral hole. Correspondent: LIU Yuguang. Lecturer, Department of physics, Tianjin University. Tianjin 300072
参考文献
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| [6] | SundgrenJE．ThinSolidFilms,1985 |
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