应用磁控溅射法在 Pt/Ti/SiO2/Si(001)衬底上制备 5 mm 厚超薄非晶 Ti-Al 薄膜作为过渡层,利用脉冲激光沉积法制备 Ba0.6 Sr0.4TiO3 薄膜,构造了 Pt/Ba0.6Sr0.4TiO3/Pt(Pt/BST/Pt)和 Pt/Ti-Al/Ba0.6Sr0.4TiO3/Ti-Al/Pt(Pt/Ti-Al/BST/Ti-Al/Pt)结构的电容器,研究了 Ti-Al 过渡层对 Pt/BST/Pt 电容器结构及其性能的影响.实验表明,过渡层的引入有效地阻止了 Pt 电极和 BST 薄膜的互扩散,降低了 BST 薄膜氧空位的浓度,提高了铁电电容器的介电性能.当测试频率为 1 kHz、直流偏压为0 V时,介电常数由引入过渡层前的 530 增大到引入后的 601,介电损耗则由0.09减小到0.03.而且过渡层的引入有效地降低了 BST 薄膜的漏电流,使正负向漏电流趋于对称,在测试电压为5 V 时,漏电流密度由3.8×10-5 A/cm2 减小到 8.25 ×10-6 A/cm2.
参考文献
[1] | Kozyrev A B;Kanareykin A D;Nehasheva E A et al.Observation of an Annmalous Correlation between Permittivity and Tunability of a Doped(Ba,Sr)TiO3 Ferroelectric Ceramic Developed for Microwave Applications[J].Applied Physics Letters,2009,95(01):012908. |
[2] | Hyun-Suk Kim;Tae-Seon Hyun;Ho-Gi Kim;Il-Doo Kim;Tae-Soon Yun;Jong-Chul Lee .Orientation effect on microwave dielectric properties of Si-integrated Ba_(0.6)Sr_(0.4)TiO_(3) thin films for frequency agile devices[J].Applied physics letters,2006(5):052902-1-052902-3-0. |
[3] | Hong Shen;Yanhong Gao;Peng Zhou;Jianhua Ma;Jinglan Sun;Xiangjian Meng;Junhao Chu .Effect of oxygen to argon ratio on properties of (Ba,Sr)TiO_(3) thin films prepared on LaNiO_(3)/Si substrates[J].Journal of Applied Physics,2009(6):061637-1-061637-4-0. |
[4] | 孙杰,刘保亭,陈江恩,娄建忠,周阳.非晶Ni-Al阻挡层对快速退火制备的硅基Ba0.6Sr0.4TiO3薄膜结构及物性影响的研究[J].人工晶体学报,2010(02):318-323. |
[5] | Wang Y;Liu BT;Wei F;Yang ZM;Du J .Fabrication and electrical properties of (111) textured (Ba0.6Sr0.4)TiO3 film on platinized Si substrate[J].Applied physics letters,2007(4):42905-1-42905-3-0. |
[6] | 李桂英,余萍,肖定全.Ba1-xSrxTiO3薄膜的Sol-gel制备技术与微结构[J].人工晶体学报,2006(05):931-935. |
[7] | Xinhua Zhu;Nui Chong;Helen Lai-Wah Chan;Chung-Loong Choy;Kin-Hung Wong;Zhiguo Liu;Naiben Ming .Epitaxial growth and planar dielectric properties of compositionally graded (Ba_(1-x)Sr_(x))TiO_(3) thin films prepared by pulsed-laser deposition[J].Applied physics letters,2002(18):3376-3378. |
[8] | L. J. Sinnamon;R. M. Bowman;J. M. Gregg .Investigation of dead-layer thickness in SrRuO_(3)/Ba_(0.5)Sr_(0.5)TiO_(3)/Au thin-film capacitors[J].Applied physics letters,2001(12):1724-1726. |
[9] | Kim HS;Kim HG;Kim ID;Kim KB;Lee JC .High-tunability and low-microwave-loss Ba0.6Sr0.4TiO3 thin films grown on high-resistivity Si substrates using TiO2 buffer layers[J].Applied physics letters,2005(21):2903-1-2903-3-0. |
[10] | W. Fan;S. Saha;J. A. Carlisle;O. Auciello;R. P. H. Chang;R. Ramesh .Layered Cu-based electrode for high-dielectric constant oxide thin film-based devices[J].Applied physics letters,2003(9):1452-1454. |
[11] | B. T. Liu;K. Maki;S. Aggarwal;B. Nagaraj;V. Nagarajan;L. Salamanca-Riba;R. Ramesh;A. M. Dhote;O. Auciello .Low-temperature integration of lead-based ferroelectric capacitors on Si with diffusion barrier layer[J].Applied physics letters,2002(19):3599-3601. |
[12] | Muralt P .Texture Control and Seeded Nucleation of Nanosize Struetures of Ferroelectric Thin Films[J].Journal of Applied Physics,2006,100(05):051605. |
[13] | Stengel M;Spaldin N A .Origin of the Dielectric Dead Layer in Nanescale Capacitors[J].Nature,2006,443(12):679-682. |
[14] | Auciello O;Fan W;Kabius B;Saha S;Carlisle JA;Chang RPH;Lopez C;Irene EA;Baragiola RA .Hybrid titanium-aluminum oxide layer as alternative high-k gate dielectric for the next generation of complementary metal-oxide-semiconductor devices[J].Applied physics letters,2005(4):2904-1-2904-3-0. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%