采用区熔法制备了P型(Bi0.15Sb0.85)2Te3+x%Te(x=0～6)热电材料,利用电子探针(EPMA)观察了区熔材料的显微结构并进行了物相分析,在300～500 K的温度范围内分别测量了材料的塞贝克系数α、电导率σ以及热导率κ.结果表明:随着额外Te的含量增加,材料的载流子(空穴)浓度减小,电导率降低;同时,载流子对声子的散射作用减弱,但第二相的存在对声子的散射作用增强,二者的共同作用使晶格热导率在室温附近随着Te含量先减小而后增大.材料的性能优值ZT则随Te含量先增大后减小,当额外Te的质量分数为3%时具有最大的ZT值,约为0.92.
参考文献
| [1] | Larson P et al.[J].Physical Review B,2002,65(08):085108. |
| [2] | Dow-Bin Hyun;Tae-Sung Oh;Jong-Seung Hwang;Jae-Dong Shim;N. V. Kolomoets .Electrical and thermoelectric properties of 90%Bi_2Te_3-5% Sb_2Te_3-5% Sb_2Se_3 single crystals doped with SbI_3[J].Scripta materialia,1998(1):49-56. |
| [3] | Dow-Bin Hyun;Tae Sung Oh;Jong-Seung Hwang .EFFECT OF EXCESS Te ADDITION ON THE THERMOELECTRIC PROPERTIES OF THE 20 PERCENT Bi_2Te_3-80 PERCENT Sb_2Te_3 SINGLE CRYSTAL AND HOT-PRESSED ALLOY[J].Scripta materialia,2001(3):455-460. |
| [4] | Seo J et al.[J].Materials Letters,1998,35:4. |
| [5] | Kim T S et al.[J].Materials Science and Engineering,2002,B90:42. |
| [6] | Seo J et al.[J].Scripta Materialia,1998,38:477. |
| [7] | Horak J et al.[J].Journal of Physics and Chemistry of Solids,1986,47:805. |
| [8] | Tae Sung Oh et al.[J].Scripta Materialia,2000,42:849. |
| [9] | Sokolov O B et al.[J].Journal of Crystal Growth,2004,262:536. |
| [10] | 史迅,陈立东,柏胜强,唐新峰.CoSb3/C60复合材料的固相反应合成和热电性能[J].物理学报,2004(05):1469-1473. |
| [11] | Seo J.;Park K.;Lee C.;Cho D. .Fabrication and thermoelectric properties of p-type Bi0.5Sb1.5Te3 compounds by ingot extrusion[J].Materials Research Bulletin: An International Journal Reporting Research on Crystal Growth and Materials Preparation and Characterization,2000(13):2157-2163. |
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