本文以柠檬酸为络合剂,采用微波辅助溶胶凝胶法制备了微米粒径的Gd0.4(MoO4)3∶1.6Eu3红色荧光粉;采用X射线粉末衍射仪、扫描电子显微镜和荧光光谱仪等对样品进行了分析和表征,讨论了荧光粉的合成方法对其表面形貌和发光性能的影响.最终将该样品与InGaN芯片结合制成发光二极管.实验结果表明:采用该法合成的具有类白钨矿结构的Gd0.4(MoO4)3∶1.6Eu3+红色荧光粉为1 ～2 μm的类球状小颗粒,且颗粒均匀,具有较窄的粒度分布,有利于LED芯片涂覆.荧光光谱显示该产品在395 nm具有强吸收峰,可与近紫外InGaN芯片相匹配,是一种可用于近紫外芯片激发的白光LED红色荧光粉.与InGaN芯片结合制成的发光二极管在617 nm处发射出可被肉眼观测的强红光.
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