A novel ZnS:TmF3 TFEL device with the structure of ITO/SiO2/ ZnS:TmF3 /SiO2/ZnS:TmF3/SiO2/Al was prepared by e-beam evaporation method. Th e EL emission spectra show that the brightness of the novel structure devices gr eatly increases compared with that of devices with traditional double insulat or structure, and the ratio of blue emission to red emission of the novel structure device is also improved. The improvement of the EL characteristics of this kind TFEL device is attributed to both of the electron acceleration and the ZnS/SiO2 interface.
参考文献
| [1] | Chaudhari V C;Patil R H et al.[J].Materials Chemistry and Physics,1999,59:162. |
| [2] | Nakanishi Y;Mori S;Nakamura T et al.[J].Materials Chemistry and Physics,1996,43:204. |
| [3] | Boudghene A;Hamzaoui S;Bouderbala M .[J].Thin Solid Films,1996,283:204. |
| [4] | Kato A;Katayama M;Mizutani A et al.[J].Journal of Applied Physics,1997,81:445. |
| [5] | Zhang Zhilin;Jiang Xueyin .[J].Journal of Crystal Growth,1992,117:997. |
| [6] | Lou Zhidong.[J].Selected doctoral thesis of Changchun Institute of physic s CAS |
| [7] | Hou Yanbing;Hua Yulin;Xu Xurong.[A].:218. |
| [8] | Chen Lichun;Deng Zhenbo;Xu Xurong.Proceedings of 7th the optical pr operties of condensed matter materials[J].Journal of Central South University of Technology,1994 |
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