首次应用修正嵌入原子法(MEAM)以及动力学蒙特卡洛方法(KMC)对Ti-Si-N薄膜的生长过程进行了计算机仿真模拟.在合理选择势函数及MEAM各项参数的基础上,利用编程软件仿真在不同基底温度下的薄膜生长过程.与采用传统简单的Mouse势进行模拟的结果相比,这种新方法的模拟结果更加准确,与实验结果更加吻合.仿真结果表明:基底温度对Ti-Si-N薄膜的形成过程有着直接的影响,当基底温度为800 K时,岛所形成的形貌最为理想,缺陷率最低.
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