浸没式光刻技术是在原干法光刻的基础上采用高折射率浸没液体取代原来空气的空间,从而提高光刻分辨率的一种先进技术. 此项技术的实际应用,为当前IC产业的飞速发展起到了关键的作用. 本文概述了浸没式光刻技术的发展历程和浸没式光刻胶遇到的挑战及要求;对浸没式光刻胶主体树脂、光致产酸剂及添加剂的研究进展进行了综述;最后对浸没式光刻胶的研究发展方向作了进一步的探讨及初步预测.
参考文献
| [1] | Fukami Y;Magome N .Projection exposure method and system[P].WO 9949504,1999-09-30. |
| [2] | Switkes M;Rothschild M .Resolution enhancement of 157nm lithography by liquid immersion[J].Proceedings of the SPIE,2002,4691:459-465. |
| [3] | Burn J. Lin .Immersion lithography and its impact on semiconductor manufacturing[J].Journal of Microlithography, Microfabrication, and Microsystems. (JM3),2004(3):377-395. |
| [4] | Padmanaban M;Romano A;Lin G et al.Performance of a dry 193nm resist under wet conditions[J].Proceedings of the SPIE,2006,6153:615307-615311. |
| [5] | Owa S;Nagasaka H .Immersion lithography:its history,current status and future prospects[J].Proceedings of the SPIE,2008,7140:714015-714012. |
| [6] | Smith B W;Fan Y;Slocum M et al.25 nm immersion lithography at a 193 nm wavelength[J].Proceedings of the SPIE,2005,5754:141-147. |
| [7] | Gronheid R;Hendrickx E;Wiaux V et al.Lithography options for the 32 nm half pitch node and their implications on resist and material technology[J].Proceedings of the SPIE,2007,6827:68271V-682710. |
| [8] | Honda K;Morita M;Otsuka H;Takahara A .Molecular aggregation structure and surface properties of poly(fluoroalkyl acrylate) thin films[J].Macromolecules,2005(13):5699-5705. |
| [9] | Varanasi P R;Kwong R W;Khojasteh M et al.193 nm single layer photoresists:defeating tradeoffs with a new class of fluoropolymers[J].Proceedings of the SPIE,2005,5753:131-139. |
| [10] | H. Ito;H. D. Truong;R. D. Allen;W. Li;P. R. Varanasi;K.-J. Chen;M. Khojasteh;W.-S. Huang;S. D. Burns;D. Pfelffer .ArF excimer laser resists based on fluoroalcohol[J].Polymers for advanced technologies,2006(2):104-115. |
| [11] | Lee S H;Kim J W et al.Polymer structure modifications for immersion leaching control[J].Proceedings of the SPIE,2007,6519:651925-651929. |
| [12] | Wu S;Lee S S;Yu C C et al.Process development and resist modification for metal trench layers from 65nm to 45 nm nodes[J].Proceedings of the SPIE,2006,6153:615334-615314. |
| [13] | Toriumi M;Shida N;Watanabe H et al.Fluoropolymer resists for 157-nm lithography[J].Proceedings of the SPIE,2002,4690:191-199. |
| [14] | Sasaki T;Shirota N;Takebe Y et al.Development of new resist materials for 193-nm dry and immersion lithography[J].Proceedings of the SPIE,2006,6153:61530E-615308. |
| [15] | Shirota N;Takebe Y;Wang S Z et al.Development of non-topcoat resist polymers for 193-nm immersion lithography[J].Proceedings of the SPIE,2007,6519:651905-651911. |
| [16] | Sundberg L K;Sanders D P;Sooriyakumaran R et al.Contact angles & structure/surface property relationships of immersion materials[J].Proceedings of the SPIE,2007,6519:65191Q-651919. |
| [17] | Sanders D P;Sundberg L K;Sooriyakumaran R et al.Fluoroalcohol materials with tailored interfacial properties for immersion lithography[J].Proceedings of the SPIE,2007,6519:651904-651912. |
| [18] | Wada K;Kanna S;Kanda H .Novel materials design for immersion lithography[J].Proceedings of the SPIE,2007,6519:651908-651906. |
| [19] | Deyan Wang;Stefan Caporale;Cecily Andes .Design Consideration for Immersion 193:Embedded Barrier Layer and Pattern Collapse Margin[J].Journal of Photopolymer Science and Technology,2007(5):687-696. |
| [20] | Wu S;Tseng A;Lin B et al.Non-topcoat resist design for immersion process at 32-nm node[J].Proceedings of the SPIE,2008,6923:692307-692314. |
| [21] | Li W;Chen K J;Kwong R et al.High performance 193 nm photoresists based on fluorosulfonamide[J].Proceedings of the SPIE,2007,6519:65190F-651910. |
| [22] | Blakey I;Conley W;George G A et al.Synthesis of high-refractive index sulfur containing polymers for 193-nm immersion lithography;a progress report[J].Proceedings of the SPIE,2006,6153:61530H-615310. |
| [23] | Whittaker A K;Blakey I;Liu H et al.High-RI resist polymers for 193 nm immersion lithography[J].Proceedings of the SPIE,2005,5753:827-835. |
| [24] | Blakey I;Chen L;Dargaville B et al.Novel high-index resists for 193 nm immersion lithography and beyond[J].Proceedings of the SPIE,2007,6519:651909-651910. |
| [25] | Matsumoto K;Costner EA;Nishimura I;Ueda M;Willson CG .High index resist for 193 nm immersion lithography[J].Macromolecules,2008(15):5674-5680. |
| [26] | Matsumoto K;Costner EA;Nishimura I;Ueda M;Willson CG .High index resist for 193 nm immersion lithography[J].Macromolecules,2008(15):5674-5680. |
| [27] | Miyamatsu T;Wang Y;Shima M et al.Material design for immersion lithography with high refractive index fluid (HIF)[J].Proceedings of the SPIE,2005,5753:10-19. |
| [28] | S. Gaugiran;R. Feilleux;C. Sourd;S. Warrick;V. Farys;D. Cruau;M. Benndorf;B. Mortini .Leaching mechanisms in immersion lithography with or without top coat[J].Microelectronic engineering,2007(5/8):1054-1057. |
| [29] | Hiromitsu Tsuji;Masaaki Yoshida;Keita Ishizuka;Tomoyuki Hirano;Kotaro Endo;Katsumi Ohmori .Resist Development Status for Immersion Lithography[J].Journal of Photopolymer Science and Technology,2005(5):641-645. |
| [30] | Wang D .Compositions and processes for immersion lithography[P].US 0246373 A1,2006-11-02. |
| [31] | Endo K;Yoshida M;Hirayama T et al.Resist composition for liquid immersion exposure process and method of forming resist pattern therewith[P].US 7264918 B2,2007-09-04. |
| [32] | Mingxing Wang;Nathan D.Jarnagin;Cheng-Tsung Lee .Novel polymeric anionic photoacid generators(PAGs)and corresponding polymers for 193 nm lithography[J].Journal of Materials Chemistry: An Interdisciplinary Journal dealing with Synthesis, Structures, Properties and Applications of Materials, Particulary Those Associated with Advanced Technology,2006(37):3701-3707. |
| [33] | Mingxing Wang;Cheng-Tsung Lee;Clifford L.Henderson .Incorporation of ionic photoacid generator(PAG)and base quencher into the resist polymer main chain for sub-50 nm resolution patterning[J].Journal of Materials Chemistry: An Interdisciplinary Journal dealing with Synthesis, Structures, Properties and Applications of Materials, Particulary Those Associated with Advanced Technology,2008(23):2704-2708. |
| [34] | Hengpeng Wu;Kenneth E. Gonsalves .Novel Positive-Tone Chemically Amplified Resists with Photoacid Generator in the Polymer Chains[J].Advanced Materials,2001(9):670-672. |
| [35] | Jung J C;Bok C K;Lim C M et al.Polymer for immersion lithography,photoresist composition containing the same,method of manufacturing a semiconductor device,and semiconductor device[P].US 0275695 A1,2006-12-7. |
| [36] | Tanaka S;Ober C K .Adamantane based molecular glass resists for 193 nm lithography[J].Proceedings of the SPIE,2006,6153:61532B-615312. |
| [37] | Anuja De Silva;Nelson M. Felix;Christopher K. Ober .Molecular Glass Resists as High-Resolution Patterning Materials[J].Advanced Materials,2008(17):3355-3361. |
| [38] | Sooriyakumaran R;Truong H;Sundberg L et al.Molecular resists based on polyhedral oligomeric silsesquioxanes (POSS)[J].Proceedings of the SPIE,2005,5753:329-337. |
| [39] | Tully DC.;Frechet JMJ.;Trimble AR. .Dendrimers with thermally labile end groups: An alternative approach to chemically amplified resist materials designed for sub-100 nm lithography[J].Advanced Materials,2000(15):1118-1122. |
| [40] | Kim J-B;Oh T-H;Kim K .Nanomolecular resists with adamantane core for 193-nm[J].Proceedings of the SPIE,2005,5753:603-610. |
| [41] | Lawson R A;Lee C-T;Whetsell R et al.Molecular glass photoresists containing photoacid generator functionality a route to a single-molecule photoresist[J].Proceedings of the SPIE,2007,6519:65191N-651910. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%