采用交替溅射Ge和ZnO靶的方法在Si(100)单晶基片上沉积了Ge/ZnO复合多层膜,并对其在空气中不同温度下进行了快速加热处理.在高温处理中部分Ge成分会被氧化转变成Ge的氧化物,XRD结果表明所制备的薄膜是由ZnO、Ge、GeO和GeO2多晶颗粒组成的复合薄膜,且随着温度的升高晶粒的尺寸加大,结晶度提高.光致发光谱的测量显示,经过高温处理过的Ge/ZnO复合多层膜可以在395nm左右发出强的紫光,随着温度的增加紫峰变尖锐且强度大大提高,并有590nm的黄发光峰出现.紫峰的增强是由于薄膜结晶度提高导致激子复合增加的结果,黄峰是由于Ge颗粒引起的局域态相关的跃迁而产生的.
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