运用AMPS软件结合相关实验数据,利用微晶硅带隙与材料晶相比的关系,对pin型微晶硅薄膜太阳电池i层带隙渐变结构的总光生载流子产额、载流子复合速率等参数进行了模拟,并与普通pin型微晶硅薄膜太阳电池进行了对比分析.结果表明,一方面带隙渐变结构增加了进入微晶硅i层作为活性层的光吸收;另一方面渐变各层之间存在缺陷和复合中心,影响载流子收集.对于带隙递增型微晶硅(μc-Si:H)薄膜太阳电池,当i层总厚度为1.2μm时.其光电转化效率为14.843%.
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