采用脉冲激光沉积法制备了(GeSe2)100-x-Bix(x=0～12)硫系玻璃薄膜.测量了薄膜的光学透射谱、吸收谱和拉曼光谱.薄膜的光学短波吸收边对应于电子的间接带间跃迁,并由此计算出其光学带隙.拉曼光谱分析表明Bi含量的增加,减小了玻璃的平均键能,导致光学带隙由1.94 eV减小到1.11 ev.Tauc斜率由486 cm-1/2eV-1/2减小到178 cm-1/2eV-1/2.退火过程中的热漂白效应减小了玻璃的结构无序性,使得薄膜的光学带隙和Tauc斜率相应增大.
Amorphous(GeSe2)100-x-Bix(x=0～12)films were prepared by the pulsed laser deposition(PLD)technique.The optical transmission spectra,absorption spectra and Raman spectra of the as-deposited and annealed films were measured.The short-wave absorption edges of the films were described using the'nondirect transition' model proposed by Tauc.The optical band gaps(Eoptg)were determined.The Tauc slopes decrease from 486 to 178 cm-1/2 eV-1/2 with increasing Bi content.Eoptg decreases from 1.94 to 1.11eV monotonously with increasing Bi content and increases more or less(0 240 meV)after annealing.Raman spectra analysis indicates that adding Bi decreases the mean bond energy in the amorphous films,which caused the decrease of Eoptg.The'thermal-bleaching effect(as much as 240 meV)was discussed in relation to the decreasing disorder in the glass network and the reduction in the mean bond energy of the as-deposited films,which were confirmed by the bigger Tauc slopes and the Raman spectra analysis,respectively.
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