GaxIn1-xN输运性质的温度特性的数值模拟

工程热物理学报 , 2008, 29(10): 1719-1721.

1.清华大学工程力学系,北京,100084

2.清华大学工程力学系,北京,100084

基金项目: 国家自然科学基金(50376025)

NUMERICAL STUDY ON TEMPERATURE DEPENDENCE OF ELECTRON TRANSPORT IN GaxIN1-xN

利用多粒子Monte Carlo方法对含位错GaxIn1-x材料的输运性质进行了研究,计算表明材料的漂移速度随温度升高而降低,InN的漂移速度的温度特性优于GaN.GaN和InN的迁移率在相同温度范围内随温度的变化趋势不同,同时位错密度对材料迁移率的温度特性影响较大.

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