以乙酰丙酮铱为前驱体,采用金属有机化合物化学气相沉积(MOCVD)技术在Mo基体上制备Ir薄膜.研究Ir的沉积效果与沉积温度及反应气体(O_2)间的关系.Ir薄膜的沉积速率与沉积温度之间的关系不符合Arrhenius方程,沉积速率与沉积温度绝对温度的倒数呈抛物线关系,当温度为750 ℃时,Ir的沉积速率达到最大值,沉积温度对Ir薄膜的显微形貌有显著影响;O_2的流量对薄膜的成分、形貌及结构等均有显著影响.
Ir films were deposited on molybdenum substrates by MOCVD using iridium tri-acetylacetonate as precursors. The effects of deposition temperature and oxygen on deposition effectiveness of iridium were discussed. The relationship between the deposition rate and the deposition temperature does not accord with Arrhenius formula; however, there exists a parabola relation between them. The deposition rate of iridium will reach maximum at 750 ℃. The deposition temperature greatly affects the film properties. The component, the surface morphology and the structure of Ir films will be influenced by the addition of oxygen.
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