利用有限差分法求解半导体器件基本方程的方法,通过改变栅线电极和衬底掺杂浓度,研究了织构结构和非对称电极对晶硅电池暗I～V特性的影响.结果表明:衬底掺杂浓度决定了织构结构晶硅电池的pn结性质,并对其暗I～V特性曲线产生具有重要影响;栅线电极覆盖绒面金字塔比率相同时,晶硅电池的暗I～V特性曲线将出现相同的分区特性,且理想因子随绒面金字塔的增加而微幅增加;栅线电极与电池底面电极构成二极管的理想因子,随金字塔周期数增加而增大,是决定晶硅电池暗I～V特性曲线性质的关键因素;当衬底掺杂浓度大于等于1×1017时,暗I～V特性曲线可分成三个变化区域;当衬底掺杂浓度小于1×1017时,暗I～V特性曲线可分成四个变化区域;同一偏压下,衬底掺杂浓度越高,暗电流越小.此外,利用pn结处于不同偏压下的总电流密度分布,详细分析了不同区域形成的物理机制.
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