分别采用AFM和原子力/扫描探针显微镜（AFM/SPM）在纳米尺度下对碲基复合（Te/TeO2-SiO2）薄膜的表面电势、电容梯度等电学特性进行测量。测试结果表明控制电压为-0.8V,反应时间为200s条件下制备的碲基复合薄膜的表面电势差达到700mV,相对介电常数小于以硅为主要成分的衬底相对介电常数。利用光谱分析,碲基复合薄膜的禁带宽度约为3.14eV。
The surface potential and capacitance gradient were characterized by AFM/SPM in nano-scale.The results showed that the maximum contact potential difference was about 700mV,the relative dielectric constant of tellurium-based composite particles was smaller than the relative dielectric constant of substrate with silicon as the main component when control voltage is-0.8V in reaction time of 200s.The optical band gap was estimated to be 3.14eV by spectrum.
参考文献
| [1] | 邢翔,郭建秋.碲的应用及其资源分布[J].矿产保护与利用,2009(03):19-22. |
| [2] | Norton P .HgCdTe infrared detectors[J].Opto-Electronics Review,2002,10(03):159-174. |
| [3] | 刘维,崔建民,田亚光,崔芳,孙雨南.二氧化碲可调谐滤波器的光和声入射角分析[J].北京理工大学学报,2004(12):1096-1099. |
| [4] | 薛燕陵.电子相关性对硅基和碲基EDFA中四波混频与互相位调制的影响[J].量子电子学报,2008(04):471-477. |
| [5] | Kim S H;Yoko T;Sakka S .Linear and nonlinear opticalproperties of TeO2 glass[J].Journal of the American Ceramic Society,1993,76:2486-2490. |
| [6] | 辜敏;李强;鲜晓东 等.三阶非线性光学性碲基复合薄膜及其制备方法[P].中国专利:201010162549,2010-09-22. |
| [7] | Agilent Technologies.Inc application note:advanced atomic force microscopy-exploring measurements of local electric properties[M].New York:Society of Nuclear Medicine,2008 |
| [8] | Masamichi Fujihira .KELVIN PROBE FORCE MICROSCOPY OF MOLECULAR SURFACES[J].Annual review of materials research,1999(0):353-380. |
| [9] | 王凌凌,杨文胜,王德军,谢腾峰.利用Kelvin探针力显微镜研究纳米尺度下n-AlGaN/GaN薄膜的表面电荷性质[J].高等学校化学学报,2011(01):139-142. |
| [10] | Huang Y;Williams C C .Capacitance-voltage measurement and modeling on a nanometer scale by scanning CV microscopy[J].Journal of Vacuum Science and Technology,1994,B12:369. |
| [11] | 刘赛锦,侯士敏,申自勇,张琦锋,郭等柱,薛增泉.用扫描电容显微镜（SCM）研究金基底上的铝纳米粒子[J].北京大学学报(自然科学版),2002(03):364-368. |
| [12] | Mardare D.;Delibas M.;Rusu GI.;Tasca M. .On the structural properties and optical transmittance of TiO2 r.f. sputtered thin films[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2000(1/4):200-206. |
| [13] | 刘高斌,王新强,冯庆,何阿玲,马勇,赵兴强,杨晓红.电子束蒸发制备CuAlO2透明导电膜及光学性质[J].功能材料,2007(12):1941-1943. |
| [14] | 王艳玲,戴世勋,周宇,徐铁峰,聂秋华.碲铋铌系统玻璃热稳定性及光学带隙研究[J].武汉理工大学学报,2008(11):5-7,19. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%