研究了镍纳米晶镶嵌在MOS(金属—氧化物一半导体)电容结构中应用于非挥发性存储器的可行性.制备了镶嵌在氧化层中的镍纳米晶.采用电子束蒸发方法,再经过快速退火工艺,得到平均尺寸7nm,密度1.5×1012/cm2的镍纳米晶.电容随频率变化曲线发现明显的峰,测试分析了电容-电压和电导-电压特性.结果表明电子通过直接隧穿停留在镍纳米晶中,并且存储在MOS结构中.
Recently,nanocrystal nonvolatile memory (NVM) devices using nanocrystals (NCs) have attracted great research interest.In this work,we investigated the feasibility ofNi nanocrystals embedded in metal-oxide-semiconductor (MOS) capacitor structure for NVM application.Ni NCs embedded in the gate oxide was fabricated.Ni nanocrystals with an average size of 7 nm and density of 1.5×1012 cm-2 were synthesized by e-beam evaporation technique followed by rapid thermal annealing.Distinct frequency-dependent capacitance peaks were observed.High-frequency capacitance versus voltage (C-V) and conductance versus voltage (G-V) measurements were also characterized.These resuits demonstrate that electrons can be loaded onto Ni nanocrystals by direct tunneling and can be stored in the fabricated MOS structure.
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