用真空电弧熔炼制备(Gd1-xDyx)5Si4 (x=0.1,0.2,0.3,0.35)和(Gd1-xHox)5Si4(x=0.05,0.15,0.25)系列合金,在950℃下168 h的真空热处理后,对其晶体结构、居里温度进行了研究.室温XRD分析发现该系列合金仍保持Gd5Si4的Sm5Ge4正交型结构,采用Rietveld法分析计算发现合金晶格常数随着x量的增加而逐渐减小.试样M-T磁化曲线测量结果表明:居里温度Tc在336 K～260 K连续可调,改变RE的含量可以得到不同的居里温度Tc;Tc近似呈线性变化,由此得出估计(Gd1-xREx)5Si4(RE=Dy,Ho)的Tc的计算公式.
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